Infineon Technologies AG Single FETs, MOSFETs IRF5802

N-Channel 150V 900mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)

MOSFET N-CH 150V 900MA MICRO6 Product overview: IRF5802 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 900MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 900MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5802 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1187066-IRF5802
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: Micro6(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Manufacturer Homepage: www.irf.com
Manufacturer Package: SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Maximum): 2W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 100
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 150V
Id - Continuous Drain Current: 900mA
Rds On (Maximum) at Id, Vgs: 1.2Ohm at 540mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 6.8nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 88pF at 25V