Infineon Technologies AG N-Channel Power MOSFET IRF7103

Description
50V Dual N-Channel IR MOSFET™ in a SO-8 package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100KHz Industry standard surface-mount power package Capable of being wave-soldered Applications Commercial HVAC
Request a Quote Datasheet
Description
50V Dual N-Channel IR MOSFET™ in a SO-8 package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100KHz Industry standard surface-mount power package Capable of being wave-soldered Applications Commercial HVAC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IRF7103 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRF7103
N-Channel Power MOSFET IRF7103
50V Dual N-Channel IR MOSFET™ in a SO-8 package Benefits Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100KHz Industry standard surface-mount power package Capable of being wave-soldered Applications Commercial HVAC

50V Dual N-Channel IR MOSFET™ in a SO-8 package


Benefits

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100KHz
  • Industry standard surface-mount power package
  • Capable of being wave-soldered

Applications

  • Commercial HVAC
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRF7103
Product Name N-Channel Power MOSFET
Polarity N-Channel; N+N
Transistor Technology / Material Si/SiC
rDS(on) 0.1300 ohms
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