Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPW60R024P7

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor RG Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications 48 V intermediate bus converter (IBC) Automotive EV charging Telecommunication infrastructure Designers who used this product also designed with 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDB8259Y | Gate driver ICs IRS4427S | Gate driver ICs