Infineon Technologies AG Dual MOSFET IRF7343

Description
55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Benefits RoHS Compliant Low RDS(on) Dynamic dv/dt Rating Fast Switching Dual N and P-Channel MOSFET Applications 1-phase string inverter solutions Central inverter solutions Designers who used this product also designed with F3L600R10W4S7F_C22 | IGBT modules 1EDN7512B | Gate driver ICs IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM25W256-G | F-RAM (Ferroelectric RAM) F3L600R10W4S7F_C22 | IGBT modules 1EDN7512B | Gate driver ICs IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM25W256-G | F-RAM (Ferroelectric RAM) F3L600R10W4S7F_C22 | IGBT modules 1EDN7512B | Gate driver ICs IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM25W256-G | F-RAM (Ferroelectric RAM)
  • Dual MOSFET - IRF7343 - Infineon Technologies AG
    Infineon Technologies AG
  • Electronic Surplus - IRF7343 - 1187233-IRF7343 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Benefits RoHS Compliant Low RDS(on) Dynamic dv/dt Rating Fast Switching Dual N and P-Channel MOSFET Applications 1-phase string inverter solutions Central inverter solutions Designers who used this product also designed with F3L600R10W4S7F_C22 | IGBT modules 1EDN7512B | Gate driver ICs IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM25W256-G | F-RAM (Ferroelectric RAM) F3L600R10W4S7F_C22 | IGBT modules 1EDN7512B | Gate driver ICs IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM25W256-G | F-RAM (Ferroelectric RAM) F3L600R10W4S7F_C22 | IGBT modules 1EDN7512B | Gate driver ICs IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM25W256-G | F-RAM (Ferroelectric RAM)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Dual MOSFET - IRF7343 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Dual MOSFET
IRF7343
Dual MOSFET IRF7343
55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Benefits RoHS Compliant Low RDS(on) Dynamic dv/dt Rating Fast Switching Dual N and P-Channel MOSFET Applications 1-phase string inverter solutions Central inverter solutions Designers who used this product also designed with F3L600R10W4S7F_C22 | IGBT modules 1EDN7512B | Gate driver ICs IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM25W256-G | F-RAM (Ferroelectric RAM) F3L600R10W4S7F_C22 | IGBT modules 1EDN7512B | Gate driver ICs IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM25W256-G | F-RAM (Ferroelectric RAM) F3L600R10W4S7F_C22 | IGBT modules 1EDN7512B | Gate driver ICs IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM25W256-G | F-RAM (Ferroelectric RAM)

55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

Benefits

  • RoHS Compliant
  • Low RDS(on)
  • Dynamic dv/dt Rating
  • Fast Switching
  • Dual N and P-Channel MOSFET

Applications

  • 1-phase string inverter solutions
  • Central inverter solutions

Designers who used this product also designed with


  • F3L600R10W4S7F_C22 |
    IGBT modules
  • 1EDN7512B |
    Gate driver ICs
  • IMBF170R1K0M1 |
    Silicon Carbide MOSFET Discretes
  • FM25W256-G |
    F-RAM (Ferroelectric RAM)
  • F3L600R10W4S7F_C22 |
    IGBT modules
  • 1EDN7512B |
    Gate driver ICs
  • IMBF170R1K0M1 |
    Silicon Carbide MOSFET Discretes
  • FM25W256-G |
    F-RAM (Ferroelectric RAM)
  • F3L600R10W4S7F_C22 |
    IGBT modules
  • 1EDN7512B |
    Gate driver ICs
  • IMBF170R1K0M1 |
    Silicon Carbide MOSFET Discretes
  • FM25W256-G |
    F-RAM (Ferroelectric RAM)
Supplier's Site Datasheet
Electronic Surplus - IRF7343 - 1187233-IRF7343 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IRF7343
1187233-IRF7343
Electronic Surplus - IRF7343 1187233-IRF7343
Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 1187233-IRF7343 Manufacturer Homepage: www.irf.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management

Manufacturer: INTERNATIONAL RECTIFIER
Win Source Part Number: 1187233-IRF7343
Manufacturer Homepage: www.irf.com
RoHS State: Request Verification
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

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Technical Specifications

  Infineon Technologies AG Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET
Product Number IRF7343 1187233-IRF7343
Product Name Dual MOSFET Electronic Surplus - IRF7343
Polarity N+P
Transistor Technology / Material Si/SiC
VGS(off) 20 volts
rDS(on) 0.0500 to 0.1050 ohms
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