Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPW60R099P7

Description
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with IRS4427S | Gate driver ICs 1ED3125MU12F | Gate driver ICs IRS4427S | Gate driver ICs 1ED3125MU12F | Gate driver ICs IRS4427S | Gate driver ICs 1ED3125MU12F | Gate driver ICs
  • 500V-950V N-Channel Power MOSFET - IPW60R099P7 - Infineon Technologies AG
    Infineon Technologies AG
  • Specialized ICs - IPW60R099P7 - 826042-IPW60R099P7 - Win Source Electronics
    Win Source Electronics
  • Specialized ICs - IPW60R099P7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with IRS4427S | Gate driver ICs 1ED3125MU12F | Gate driver ICs IRS4427S | Gate driver ICs 1ED3125MU12F | Gate driver ICs IRS4427S | Gate driver ICs 1ED3125MU12F | Gate driver ICs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPW60R099P7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPW60R099P7
500V-950V N-Channel Power MOSFET IPW60R099P7
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with IRS4427S | Gate driver ICs 1ED3125MU12F | Gate driver ICs IRS4427S | Gate driver ICs 1ED3125MU12F | Gate driver ICs IRS4427S | Gate driver ICs 1ED3125MU12F | Gate driver ICs

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.


Summary of Features

Efficiency

  • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G

Ease-of-use

  • ESD ruggedness of ≥ 2kV (HBM class 2)
  • Integrated gate resistor R G
  • Rugged body diode
  • Wide portfolio in through hole and surface mount packages
  • Both standard grade and industrial grade parts are available

Benefits

Efficiency

  • Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency

Ease-of-use

  • Ease-of-use in manufacturing environments by stopping ESD failures occurring
  • Integrated R G reduces MOSFET oscillation sensitivity
  • MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
  • Excellent ruggedness during hard commutation of the body diode seen in LLC topology
  • Suitable for a wide variety of end applications and output powers
  • Parts available suitable for consumer and industrial applications

Potential Applications

  • TV power supply
  • Industrial SMPS
  • Server
  • Telecom
  • Lighting

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Light electric vehicles (LEV)
  • Telecommunication infrastructure

Designers who used this product also designed with


  • IRS4427S |
    Gate driver ICs
  • 1ED3125MU12F |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1ED3125MU12F |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1ED3125MU12F |
    Gate driver ICs
Supplier's Site Datasheet
Specialized ICs - IPW60R099P7 - 826042-IPW60R099P7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Specialized ICs - IPW60R099P7
826042-IPW60R099P7
Specialized ICs - IPW60R099P7 826042-IPW60R099P7
Manufacturer: Infineon Technologies Win Source Part Number: 826042-IPW60R099P7 Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 826042-IPW60R099P7
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
600V 31A MOSFET Transistor
278-IPW60R099P7
600V 31A MOSFET Transistor 278-IPW60R099P7
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube Product overview: IPW60R099P7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R099P7 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-247 Tube Product overview: IPW60R099P7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R099P7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Specialized ICs - IPW60R099P7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Specialized ICs
IPW60R099P7
Specialized ICs IPW60R099P7
600V, 0.099OHM, N-CHANNEL MOSFET

600V, 0.099OHM, N-CHANNEL MOSFET

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global)
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IPW60R099P7 826042-IPW60R099P7 278-IPW60R099P7 IPW60R099P7
Product Name 500V-950V N-Channel Power MOSFET Specialized ICs - IPW60R099P7 600V 31A MOSFET Transistor Specialized ICs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0990 ohms
QG 45 nC
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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