Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPT60R028G7

Description
A new SMD package using Kelvin source concept For the first time the CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. Summary of Features CoolMOS™ C7 Gold SJ MOSFET Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G Enables best-in-class R DS(on) in smallest footprint TO-Leadless package Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (~1nH) Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads Enables improved thermal performance R th Benefits Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements Production cost reduction by moving to SMD through quicker assembly times Potential Applications Telecom Server Solar Industrial SMPS Applications 48 V intermediate bus converter (IBC) Consumer electronics DIN rail power supplies Power conversion Telecommunication infrastructure Designers who used this product also designed with 1ED3125MU12F | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDN7511B | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET 2EDS8165H | Gate driver ICs IDL10G65C5 | CoolSiC™ Schottky Diodes BSC026N08NS5 | N-Channel Power MOSFET 1EDB8275F | Gate driver ICs IDL08G65C5 | CoolSiC™ Schottky Diodes BSC014N04LSI | N-Channel Power MOSFET IQD009N06NM5CG | N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs BSC035N10NS5 | N-Channel Power MOSFET 1ED44171N01B | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED3125MU12F | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDN7511B | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET 1 2 3 4 5
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Description
A new SMD package using Kelvin source concept For the first time the CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. Summary of Features CoolMOS™ C7 Gold SJ MOSFET Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G Enables best-in-class R DS(on) in smallest footprint TO-Leadless package Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (~1nH) Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads Enables improved thermal performance R th Benefits Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements Production cost reduction by moving to SMD through quicker assembly times Potential Applications Telecom Server Solar Industrial SMPS Applications 48 V intermediate bus converter (IBC) Consumer electronics DIN rail power supplies Power conversion Telecommunication infrastructure Designers who used this product also designed with 1ED3125MU12F | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDN7511B | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET 2EDS8165H | Gate driver ICs IDL10G65C5 | CoolSiC™ Schottky Diodes BSC026N08NS5 | N-Channel Power MOSFET 1EDB8275F | Gate driver ICs IDL08G65C5 | CoolSiC™ Schottky Diodes BSC014N04LSI | N-Channel Power MOSFET IQD009N06NM5CG | N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs BSC035N10NS5 | N-Channel Power MOSFET 1ED44171N01B | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED3125MU12F | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDN7511B | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET 1 2 3 4 5
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500V-950V N-Channel Power MOSFET - IPT60R028G7 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPT60R028G7
500V-950V N-Channel Power MOSFET IPT60R028G7
A new SMD package using Kelvin source concept For the first time the CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. Summary of Features CoolMOS™ C7 Gold SJ MOSFET Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G Enables best-in-class R DS(on) in smallest footprint TO-Leadless package Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (~1nH) Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads Enables improved thermal performance R th Benefits Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements Production cost reduction by moving to SMD through quicker assembly times Potential Applications Telecom Server Solar Industrial SMPS Applications 48 V intermediate bus converter (IBC) Consumer electronics DIN rail power supplies Power conversion Telecommunication infrastructure Designers who used this product also designed with 1ED3125MU12F | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDN7511B | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET 2EDS8165H | Gate driver ICs IDL10G65C5 | CoolSiC™ Schottky Diodes BSC026N08NS5 | N-Channel Power MOSFET 1EDB8275F | Gate driver ICs IDL08G65C5 | CoolSiC™ Schottky Diodes BSC014N04LSI | N-Channel Power MOSFET IQD009N06NM5CG | N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs BSC035N10NS5 | N-Channel Power MOSFET 1ED44171N01B | Gate driver ICs 1ED3124MU12F | Gate driver ICs 1ED3125MU12F | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDN7511B | Gate driver ICs BSC012N06NS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC004NE2LS5 | N-Channel Power MOSFET 1 2 3 4 5

A new SMD package using Kelvin source concept

For the first time the CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.


Summary of Features

CoolMOS™ C7 Gold SJ MOSFET

  • Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G
  • Enables best-in-class R DS(on) in smallest footprint

TO-Leadless package

  • Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (~1nH)
  • Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads
  • Enables improved thermal performance R th

Benefits

  • Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept
  • Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements
  • Production cost reduction by moving to SMD through quicker assembly times

Potential Applications

  • Telecom
  • Server
  • Solar
  • Industrial SMPS

Applications

  • 48 V intermediate bus converter (IBC)
  • Consumer electronics
  • DIN rail power supplies
  • Power conversion
  • Telecommunication infrastructure

Designers who used this product also designed with


  • 1ED3125MU12F |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1EDN7511B |
    Gate driver ICs
  • BSC012N06NS |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • 2EDS8165H |
    Gate driver ICs
  • IDL10G65C5 |
    CoolSiC™ Schottky Diodes
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • 1EDB8275F |
    Gate driver ICs
  • IDL08G65C5 |
    CoolSiC™ Schottky Diodes
  • BSC014N04LSI |
    N-Channel Power MOSFET
  • IQD009N06NM5CG |
    N-Channel Power MOSFET
  • IQE006NE2LM5CG |
    N-Channel Power MOSFET
  • 1EDI20N12AF |
    Gate driver ICs
  • BSC035N10NS5 |
    N-Channel Power MOSFET
  • 1ED44171N01B |
    Gate driver ICs
  • 1ED3124MU12F |
    Gate driver ICs
  • 1ED3125MU12F |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1EDN7511B |
    Gate driver ICs
  • BSC012N06NS |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • BSC004NE2LS5 |
    N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPT60R028G7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0280 ohms
QG 123 nC
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