A new SMD package using Kelvin source concept
For the first time the CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.
Summary of Features
CoolMOS™ C7 Gold SJ MOSFET
Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G
Enables best-in-class R DS(on) in smallest footprint
TO-Leadless package
Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (~1nH)
Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads
Enables improved thermal performance R th
Benefits
Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept
Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements
Production cost reduction by moving to SMD through quicker assembly times
Potential Applications
Telecom
Server
Solar
Industrial SMPS
Applications
48 V intermediate bus converter (IBC)
Consumer electronics
DIN rail power supplies
Power conversion
Telecommunication infrastructure
Designers who used this product also designed with
1ED3125MU12F | Gate driver ICs
1ED44173N01B | Gate driver ICs
1EDN8511B | Gate driver ICs
2EDR8259X | Gate driver ICs
1EDN7511B | Gate driver ICs
BSC012N06NS | N-Channel Power MOSFET
ICE2QR2280G-1 | CoolSET™ Quasi Resonant
BSC004NE2LS5 | N-Channel Power MOSFET
2EDS8165H | Gate driver ICs
IDL10G65C5 | CoolSiC™ Schottky Diodes
BSC026N08NS5 | N-Channel Power MOSFET
1EDB8275F | Gate driver ICs
IDL08G65C5 | CoolSiC™ Schottky Diodes
BSC014N04LSI | N-Channel Power MOSFET
IQD009N06NM5CG | N-Channel Power MOSFET
IQE006NE2LM5CG | N-Channel Power MOSFET
1EDI20N12AF | Gate driver ICs
BSC035N10NS5 | N-Channel Power MOSFET
1ED44171N01B | Gate driver ICs
1ED3124MU12F | Gate driver ICs
1ED3125MU12F | Gate driver ICs
1ED44173N01B | Gate driver ICs
1EDN8511B | Gate driver ICs
2EDR8259X | Gate driver ICs
1EDN7511B | Gate driver ICs
BSC012N06NS | N-Channel Power MOSFET
ICE2QR2280G-1 | CoolSET™ Quasi Resonant
BSC004NE2LS5 | N-Channel Power MOSFET
1 2 3 4 5
A new SMD package using Kelvin source concept
For the first time the CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.
Summary of Features
CoolMOS™ C7 Gold SJ MOSFET
- Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G
- Enables best-in-class R DS(on) in smallest footprint
TO-Leadless package
- Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (~1nH)
- Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads
- Enables improved thermal performance R th
Benefits
- Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept
- Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements
- Production cost reduction by moving to SMD through quicker assembly times
Potential Applications
- Telecom
- Server
- Solar
- Industrial SMPS
Applications
- 48 V intermediate bus converter (IBC)
- Consumer electronics
- DIN rail power supplies
- Power conversion
- Telecommunication infrastructure
Designers who used this product also designed with
- 1ED3125MU12F |
Gate driver ICs
- 1ED44173N01B |
Gate driver ICs
- 1EDN8511B |
Gate driver ICs
- 2EDR8259X |
Gate driver ICs
- 1EDN7511B |
Gate driver ICs
- BSC012N06NS |
N-Channel Power MOSFET
- ICE2QR2280G-1 |
CoolSET™ Quasi Resonant
- BSC004NE2LS5 |
N-Channel Power MOSFET
- 2EDS8165H |
Gate driver ICs
- IDL10G65C5 |
CoolSiC™ Schottky Diodes
- BSC026N08NS5 |
N-Channel Power MOSFET
- 1EDB8275F |
Gate driver ICs
- IDL08G65C5 |
CoolSiC™ Schottky Diodes
- BSC014N04LSI |
N-Channel Power MOSFET
- IQD009N06NM5CG |
N-Channel Power MOSFET
- IQE006NE2LM5CG |
N-Channel Power MOSFET
- 1EDI20N12AF |
Gate driver ICs
- BSC035N10NS5 |
N-Channel Power MOSFET
- 1ED44171N01B |
Gate driver ICs
- 1ED3124MU12F |
Gate driver ICs
- 1ED3125MU12F |
Gate driver ICs
- 1ED44173N01B |
Gate driver ICs
- 1EDN8511B |
Gate driver ICs
- 2EDR8259X |
Gate driver ICs
- 1EDN7511B |
Gate driver ICs
- BSC012N06NS |
N-Channel Power MOSFET
- ICE2QR2280G-1 |
CoolSET™ Quasi Resonant
- BSC004NE2LS5 |
N-Channel Power MOSFET
1
2
3
4
5