The IPW60R024CFD7 is a 600V CoolMOS™ CFD7 N-channel power MOSFET in a PG-TO-247-3 package, designed for resonant topologies such as phase-shift full-bridge (ZVS) and LLC applications in server, telecom, and EV charging systems. It features a maximum drain-source voltage of 650V, a drain-source on-state resistance of 24 mΩ, a gate charge of 183 nC, and a pulsed drain current of 360 A. The device includes an ultra-fast body diode with a reverse recovery charge (Qrr) of up to 2.6 μC and a maximum diode commutation speed of 1300 A/µs. It meets JEDEC standards for industrial applications, has a thermal resistance junction-to-case of 0.39 °C/W, and operates with a junction temperature range of -55°C to 150°C.
600V CoolMOS™ CFD7 Superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies
Infineon’s CoolMOS™ CFD7 Superjunction MOSFET IPW60R024CFD7 in 600V is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.
Summary of Features
Benefits
Potential Applications
Server, Telecom, EV-charging, SMPS, PC power
Applications
Designers who used this product also designed with
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPW60R024CFD7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPW60R024CFD7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0240 ohms |
| QG | 183 nC |
