Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPW60R024CFD7 IPW60R024CFD7

600V CoolMOS™ CFD7 Superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies Infineon’s CoolMOS™ CFD7 Superjunction MOSFET IPW60R024CFD7 in 600V is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors. Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Applications Complete system solutions for smart TVs EV charging On-board charging (OBC) for electric vehicles Telecommunication infrastructure Designers who used this product also designed with IRS4427S | Gate driver ICs 1ED3124MU12F | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs IRS4427S | Gate driver ICs 1ED3124MU12F | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs IRS4427S | Gate driver ICs 1ED3124MU12F | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs