MOSFET N-CH 40V 12.7A DIRECTFET Product overview: IRF6614 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 12.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 12.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6614 can be used for catalog matching and distributor lookup.
N-Channel 40V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
Manufacturer: Infineon Technologies
Win Source Part Number: 1187138-IRF6614
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DIRECTFET ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: DirectFET Isometric ST
Power Dissipation (Maximum): 2.1W, 42W
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 4,800
MSL Level: 3 (168 Hours)
Vds - Drain-Source Breakdown Voltage: 40V
Id - Continuous Drain Current: 12.7A, 55A
Rds On (Maximum) at Id, Vgs: 8.3mOhm at 12.7A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.25V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 29nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2560pF at 20V
MOSFET N-CH 40V 12.7A DIRECTFET
Integrated Circuits (ICs) - Transistors - MOSFETs
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRF6614 | IRF6614-ND | 1187138-IRF6614 | IRF6614 | IRF6614 |
| Product Name | 40V 12.7A MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - IRF6614 | Single FETs, MOSFETs | Integrated Circuits (ICs) - Transistors - MOSFETs |
| PD | 2100 milliwatts | 2100 to 42000 milliwatts | 2100 milliwatts | ||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | ||
| Package Type | Tape & Reel (TR) | DirectFET™ Isometric ST | SOT3 | DirectFET™ Isometric ST | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape and Reel | |||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel |
