Infineon Technologies AG Single FETs, MOSFETs IRF6609

N-Channel 20V 31A (Ta), 150A (Tc) 1.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT

MOSFET N-CH 20V 31A DIRECTFET Product overview: IRF6609 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6609 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1187135-IRF6609
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DIRECTFET MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: DirectFET Isometric MT
Power Dissipation (Maximum): 1.8W, 89W
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 3 (168 Hours)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 31A, 150A
Rds On (Maximum) at Id, Vgs: 2mOhm at 31A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.45V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 69nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 6290pF at 10V