Infineon Technologies AG FETs - Single - IRF6609 IRF6609

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187135-IRF6609 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: DIRECTFET MT Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -40°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: DirectFET Isometric MT Power Dissipation (Maximum): 1.8W, 89W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 3 (168 Hours) Vds - Drain-Source Breakdown Voltage: 20V Id - Continuous Drain Current: 31A, 150A Rds On (Maximum) at Id, Vgs: 2mOhm at 31A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.45V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 69nC at 4.5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 6290pF at 10V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187135-IRF6609 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: DIRECTFET MT Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -40°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: DirectFET Isometric MT Power Dissipation (Maximum): 1.8W, 89W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 3 (168 Hours) Vds - Drain-Source Breakdown Voltage: 20V Id - Continuous Drain Current: 31A, 150A Rds On (Maximum) at Id, Vgs: 2mOhm at 31A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.45V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 69nC at 4.5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 6290pF at 10V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRF6609 - 1187135-IRF6609 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF6609
1187135-IRF6609
FETs - Single - IRF6609 1187135-IRF6609
Manufacturer: Infineon Technologies Win Source Part Number: 1187135-IRF6609 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: DIRECTFET MT Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -40°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: DirectFET Isometric MT Power Dissipation (Maximum): 1.8W, 89W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 3 (168 Hours) Vds - Drain-Source Breakdown Voltage: 20V Id - Continuous Drain Current: 31A, 150A Rds On (Maximum) at Id, Vgs: 2mOhm at 31A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.45V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 69nC at 4.5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 6290pF at 10V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187135-IRF6609
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DIRECTFET MT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: DirectFET Isometric MT
Power Dissipation (Maximum): 1.8W, 89W
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 3 (168 Hours)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 31A, 150A
Rds On (Maximum) at Id, Vgs: 2mOhm at 31A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.45V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 69nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 6290pF at 10V

Buy Now
Single FETs, MOSFETs - IRF6609TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6609TR-ND
Single FETs, MOSFETs IRF6609TR-ND
N-Channel 20V 31A (Ta), 150A (Tc) 1.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT

N-Channel 20V 31A (Ta), 150A (Tc) 1.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT

Buy Now Datasheet
Singapore
20V 31A MOSFET Transistor
278-IRF6609
20V 31A MOSFET Transistor 278-IRF6609
MOSFET N-CH 20V 31A DIRECTFET Product overview: IRF6609 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6609 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 31A DIRECTFET Product overview: IRF6609 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6609 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6609 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6609
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6609
MOSFET N-CH 20V 31A DIRECTFET

MOSFET N-CH 20V 31A DIRECTFET

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1187135-IRF6609 IRF6609TR-ND 278-IRF6609 IRF6609
Product Name FETs - Single - IRF6609 Single FETs, MOSFETs 20V 31A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts
QG 69 nC
PD 1800 to 89000 milliwatts 1800 milliwatts
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