Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPW60R080P7

Description
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Energy Storage Systems On-board charging (OBC) for electric vehicles Designers who used this product also designed with 2EDR8259X | Gate driver ICs 1ED3123MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes 2ED2110S06M | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3123MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes 2ED2110S06M | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3123MC12H | Gate driver ICs 1 2
  • 500V-950V N-Channel Power MOSFET - IPW60R080P7 - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R080P7 - 826040-IPW60R080P7 - Win Source Electronics
    Win Source Electronics
Request a Quote
Description
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Energy Storage Systems On-board charging (OBC) for electric vehicles Designers who used this product also designed with 2EDR8259X | Gate driver ICs 1ED3123MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes 2ED2110S06M | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3123MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes 2ED2110S06M | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3123MC12H | Gate driver ICs 1 2
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IPW60R080P7 is a 600V CoolMOSâ„¢ P7 power MOSFET designed for high-efficiency switching applications such as PFC, LLC, and PWM stages. It is packaged in a PG-TO-247-3 case with a maximum continuous drain current of 32A at TC=150°C and a pulsed drain current of 110A at TC=25°C. The device features a maximum on-state resistance of 80mΩ, a typical gate charge of 51nC, and an avalanche energy rating of 118mJ for single pulses. It meets JEDEC standards for industrial applications and exhibits ESD robustness exceeding 2kV (HBM). The body diode supports a maximum commutation speed of 900A/µs and a reverse dv/dt of 50V/ns.

Datasheet Summary
Powered by GS/AI

The IPW60R080P7 is a 600V CoolMOSâ„¢ P7 power MOSFET designed for high-efficiency switching applications such as PFC, LLC, and PWM stages. It is packaged in a PG-TO-247-3 case with a maximum continuous drain current of 32A at TC=150°C and a pulsed drain current of 110A at TC=25°C. The device features a maximum on-state resistance of 80mΩ, a typical gate charge of 51nC, and an avalanche energy rating of 118mJ for single pulses. It meets JEDEC standards for industrial applications and exhibits ESD robustness exceeding 2kV (HBM). The body diode supports a maximum commutation speed of 900A/µs and a reverse dv/dt of 50V/ns.

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPW60R080P7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPW60R080P7
500V-950V N-Channel Power MOSFET IPW60R080P7
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Energy Storage Systems On-board charging (OBC) for electric vehicles Designers who used this product also designed with 2EDR8259X | Gate driver ICs 1ED3123MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes 2ED2110S06M | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3123MC12H | Gate driver ICs 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes 2ED2110S06M | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3123MC12H | Gate driver ICs 1 2

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.


Summary of Features

Efficiency

  • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G

Ease-of-use

  • ESD ruggedness of ≥ 2kV (HBM class 2)
  • Integrated gate resistor R G
  • Rugged body diode
  • Wide portfolio in through hole and surface mount packages
  • Both standard grade and industrial grade parts are available

Benefits

Efficiency

  • Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency

Ease-of-use

  • Ease-of-use in manufacturing environments by stopping ESD failures occurring
  • Integrated R G reduces MOSFET oscillation sensitivity
  • MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
  • Excellent ruggedness during hard commutation of the body diode seen in LLC topology
  • Suitable for a wide variety of end applications and output powers
  • Parts available suitable for consumer and industrial applications

Potential Applications

  • TV power supply
  • Industrial SMPS
  • Server
  • Telecom
  • Lighting

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Energy Storage Systems
  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • 2EDR8259X |
    Gate driver ICs
  • 1ED3123MC12H |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • IDH10G65C6 |
    CoolSiC™ Schottky Diodes
  • 2ED2110S06M |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1ED3123MC12H |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • IDH10G65C6 |
    CoolSiC™ Schottky Diodes
  • 2ED2110S06M |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1ED3123MC12H |
    Gate driver ICs

1
2

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
600V MOSFET Transistor
285-IPW60R080P7
600V MOSFET Transistor 285-IPW60R080P7
600V CoolMOSª P7 Power Transistor Product overview: IPW60R080P7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPW60R080P7 can be used for catalog matching and distributor lookup.

600V CoolMOSª P7 Power Transistor Product overview: IPW60R080P7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPW60R080P7 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R080P7 - 826040-IPW60R080P7 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R080P7
826040-IPW60R080P7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R080P7 826040-IPW60R080P7
Manufacturer: Infineon Technologies Win Source Part Number: 826040-IPW60R080P7 Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 82 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 826040-IPW60R080P7
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Limited

Buy Now

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPW60R080P7 285-IPW60R080P7 826040-IPW60R080P7
Product Name 500V-950V N-Channel Power MOSFET 600V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R080P7
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0800 ohms
QG 51 nC
Unlock Full Specs
to access all available technical data