Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPW60R070P6

Description
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications 48 V intermediate bus converter (IBC) Complete system solutions for smart TVs EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2184S06F | Gate driver ICs IRS4427S | Gate driver ICs IDH10G65C5 | CoolSiC™ Schottky Diodes 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2184S06F | Gate driver ICs IRS4427S | Gate driver ICs IDH10G65C5 | CoolSiC™ Schottky Diodes 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 1 2
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Description
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications 48 V intermediate bus converter (IBC) Complete system solutions for smart TVs EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2184S06F | Gate driver ICs IRS4427S | Gate driver ICs IDH10G65C5 | CoolSiC™ Schottky Diodes 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2184S06F | Gate driver ICs IRS4427S | Gate driver ICs IDH10G65C5 | CoolSiC™ Schottky Diodes 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPW60R070P6 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPW60R070P6
500V-950V N-Channel Power MOSFET IPW60R070P6
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications 48 V intermediate bus converter (IBC) Complete system solutions for smart TVs EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2184S06F | Gate driver ICs IRS4427S | Gate driver ICs IDH10G65C5 | CoolSiC™ Schottky Diodes 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2184S06F | Gate driver ICs IRS4427S | Gate driver ICs IDH10G65C5 | CoolSiC™ Schottky Diodes 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDN8511B | Gate driver ICs 1 2

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.


Summary of Features

  • Reduced gate charge (Q g)
  • Higher V th
  • Good body diode ruggedness
  • Optimized integrated R g
  • Improved dv/dt from 50V/ns
  • CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

  • Improved effciency especially in light load condition
  • Better efficiency in soft switching applications due to earlier turn-off
  • Suitable for hard- & soft-switching topologies
  • Optimized balance of efficiency and ease of use and good controllability of switching behavior
  • High robustness and better efficiency
  • Outstanding quality & reliability

Potential Applications

  • PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
  • PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Applications

  • 48 V intermediate bus converter (IBC)
  • Complete system solutions for smart TVs

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • 1EDB8275F |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • IDH10G65C5 |
    CoolSiC™ Schottky Diodes
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • IDH10G65C5 |
    CoolSiC™ Schottky Diodes
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs

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Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R070P6 - 1186474-IPW60R070P6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R070P6
1186474-IPW60R070P6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R070P6 1186474-IPW60R070P6
Manufacturer: Infineon Technologies Win Source Part Number: 1186474-IPW60R070P6 Family Name: IPW60R070P6 Manufacturer Homepage: www.infineon.com Alternative Parts (Cross-Reference): STW47NM60ND; STW36NM60ND; R6535ENZVC8; Introduction Date: March 07, 2014 ECCN: EAR99 Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1186474-IPW60R070P6
Family Name: IPW60R070P6
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): STW47NM60ND; STW36NM60ND; R6535ENZVC8;
Introduction Date: March 07, 2014
ECCN: EAR99
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now
Single FETs, MOSFETs - IPW60R070P6 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPW60R070P6
Single FETs, MOSFETs IPW60R070P6
600V, 0.07OHM, N-CHANNEL MOSFET,

600V, 0.07OHM, N-CHANNEL MOSFET,

Supplier's Site Datasheet
Singapore
600V 53.5A MOSFET Transistor
278-IPW60R070P6
600V 53.5A MOSFET Transistor 278-IPW60R070P6
Trans MOSFET N-CH 600V 53.5A 3-Pin(3+Tab) TO-247 Tube Product overview: IPW60R070P6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 53.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 53.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R070P6 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 600V 53.5A 3-Pin(3+Tab) TO-247 Tube Product overview: IPW60R070P6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 53.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 53.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R070P6 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET HIGH POWER PRICE/PERFORM

MOSFET HIGH POWER PRICE/PERFORM

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPW60R070P6 1186474-IPW60R070P6 IPW60R070P6 278-IPW60R070P6 IPW60R070P6
Product Name 500V-950V N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R070P6 Single FETs, MOSFETs 600V 53.5A MOSFET Transistor MOSFET
Polarity N-Channel; N N-Channel; N-Channel N-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
rDS(on) 0.0700 ohms
QG 100 nC
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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