The IPW60R070P6 is a 600V CoolMOS™ P6 superjunction MOSFET in a TO-247 package designed for high-efficiency switching applications such as PFC, hard-switching PWM, and resonant converters. It has a maximum on-state resistance of 70 mΩ, a total gate charge of 100 nC, and a pulsed drain current of 156 A. The device exhibits extremely low switching and conduction losses, with a dv/dt ruggedness of 100 V/ns and a body diode di/dt of 300 A/µs. It is qualified for industrial-grade applications according to JEDEC J-STD-20 and JESD22, with an operating junction temperature range of -55°C to 150°C.
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
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Manufacturer: Infineon Technologies
Win Source Part Number: 1186474-IPW60R070P6
Family Name: IPW60R070P6
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): STW47NM60ND; STW36NM60ND; R6535ENZVC8;
Introduction Date: March 07, 2014
ECCN: EAR99
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Trans MOSFET N-CH 600V 53.5A 3-Pin(3+Tab) TO-247 Tube Product overview: IPW60R070P6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 53.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 53.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW60R070P6 can be used for catalog matching and distributor lookup.
MOSFET HIGH POWER PRICE/PERFORM
600V, 0.07OHM, N-CHANNEL MOSFET,
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPW60R070P6 | 1186474-IPW60R070P6 | 278-IPW60R070P6 | IPW60R070P6 | IPW60R070P6 |
| Product Name | 500V-950V N-Channel Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R070P6 | 600V 53.5A MOSFET Transistor | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel; N | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Si/SiC | MOSFET (Metal Oxide) | |||
| rDS(on) | 0.0700 ohms | ||||
| QG | 100 nC | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
