MOSFET N-CH 40V 180A TO220AB
IRF1404 - 12V-300V N-Channel Power MOSFET
IRF1404 - 12V-300V N-Channel Power MOSFET
N-Channel 40V 180A (Tc) 200W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 017414-IRF1404ZPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Family Name: IRF1404
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 4340pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.7 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): BUK754R3-40B; BUK754R3-40B,127; BUK654R8-40C,127;
Introduction Date: January 03, 2006
ECCN: EAR99
Country of Origin: China, Mexico, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient
MOSFET N-Channel 40V 190A HEXFET TO220AB
MOSFET N-Channel 40V 190A HEXFET TO220AB
MOSFET N-Channel 40V 190A HEXFET TO220AB
MOSFET N-CH 40V 180A TO220AB
40V 75A 3.7mΩ@10V,75A 200W 4V@250uA N Channel TO-220AB MOSFETs ROHS
MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg
N CHANNEL MOSFET, 40V, 190A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:190A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
Specifically designed for Automotive applications, ID = 75A this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Features:
| ODG (Origin Data Global) | Rochester Electronics | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF1404ZPBF | IRF1404ZPBF | IRF1404ZPBF-ND | 017414-IRF1404ZPBF | 6886813 | 6886813P | IRF1404ZPBF | IRF1404ZPBF | IRF1404ZPBF | 63J7191 | 70016941 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF1404ZPBF | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | N Channel Mosfet, 40V, 190A, To-220Ab; Channel Type Infineon | MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 2.7Milliohms;ID 190A;TO-220AB;PD 220W;-55de | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | 40 volts | |||||||
| IDSS | 180000 milliamps | 190000 milliamps | |||||||||
| PD | 200000 milliwatts | 200000 milliwatts | 200000 milliwatts | 220000 milliwatts |
