The IRF5210SPBF is a P-Channel MOSFET designed for power management applications. It features a maximum drain-source breakdown voltage of 100V and a continuous drain current rating of 38A at a gate-source voltage of -10V. The device has a low on-resistance of 60mOc, which enhances its efficiency in switching applications. It operates within a temperature range of -55¬8C to 150¬8C, making it suitable for various environmental conditions. The maximum power dissipation is rated at 3.1W, with a thermal resistance of 0.75¬8C/W from junction to case. The total gate charge is specified at 230nC, facilitating fast switching capabilities. This component is packaged in a D2PAK format, suitable for surface mount applications. The IRF5210SPBF is halogen-free and compliant with environmental standards, making it a reliable choice for engineers looking for efficient power management solutions.
Manufacturer: Infineon Technologies
Win Source Part Number: 1187038-IRF5210SPBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Family Name: IRF5210
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.1W, 170W
Alternative Parts (Cross-Reference): RSJ250P10FRATL; FQB34P10TM_NL; FQB34P10;
Introduction Date: May 22, 2006
ECCN: EAR99
Country of Origin: China ,Republic of Korea
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 38A
Rds On (Maximum) at Id, Vgs: 60mOhm at 38A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 230nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2780pF at 25V
MOSFET P-CH 100V 38A D2PAK
P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Surface Mount D2PAK
MOSFET P-CH 100V 38A D2PAK
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 60 Milliohms;ID -38A;D2Pak;PD 170W;-55degc
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1187038-IRF5210SPBF | IRF5210SPBF | IRF5210SPBF-ND | IRF5210SPBF | 70017467 |
| Product Name | FETs - Single - IRF5210SPBF | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 60 Milliohms;ID -38A;D2Pak;PD 170W;-55degc |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |
| V(BR)DSS | 100 volts | 100 volts | -100 volts | ||
| QG | 230 nC | ||||
| PD | 3100 to 170000 milliwatts | 3100 milliwatts | 170000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
