The IRF5210SPBF is a P-Channel MOSFET designed for power management applications. It features a maximum drain-source breakdown voltage of 100V and a continuous drain current rating of 38A at a gate-source voltage of -10V. The device has a low on-resistance of 60mOc, which enhances its efficiency in switching applications. It operates within a temperature range of -55¬8C to 150¬8C, making it suitable for various environmental conditions. The maximum power dissipation is rated at 3.1W, with a thermal resistance of 0.75¬8C/W from junction to case. The total gate charge is specified at 230nC, facilitating fast switching capabilities. This component is packaged in a D2PAK format, suitable for surface mount applications. The IRF5210SPBF is halogen-free and compliant with environmental standards, making it a reliable choice for engineers looking for efficient power management solutions.
P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Surface Mount D2PAK
MOSFET P-CH 100V 38A D2PAK Product overview: IRF5210SPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 38A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 38A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF5210SPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1187038-IRF5210SPBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Family Name: IRF5210
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.1W, 170W
Alternative Parts (Cross-Reference): RSJ250P10FRATL; FQB34P10TM_NL; FQB34P10;
Introduction Date: May 22, 2006
ECCN: EAR99
Country of Origin: China ,Republic of Korea
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 38A
Rds On (Maximum) at Id, Vgs: 60mOhm at 38A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 230nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2780pF at 25V
MOSFET P-CH 100V 38A D2PAK
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 60 Milliohms;ID -38A;D2Pak;PD 170W;-55degc
MOSFET P-CH 100V 38A D2PAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF5210SPBF-ND | 278-IRF5210SPBF | 1187038-IRF5210SPBF | IRF5210SPBF | 70017467 | IRF5210SPBF |
| Product Name | Single FETs, MOSFETs | 100V 38A MOSFET Transistor | FETs - Single - IRF5210SPBF | Single FETs, MOSFETs | MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 60 Milliohms;ID -38A;D2Pak;PD 170W;-55degc | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | TO-263; SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2Pak | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| PD | 3100 milliwatts | 3100 to 170000 milliwatts | 3100 milliwatts | 170000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Packing Method | Tube | Tube; Tube | Tube; Tube |
