IPTC054N15NM5 is an N-channel MOSFET rated for 150 V drain-source voltage and 143 A continuous drain current, designed for high-power applications requiring low conduction losses. It is packaged in PG-HDSOP-16 with a top-side thermal pad, measuring 10.10 mm by 15.20 mm. The device features a maximum on-resistance of 5.4 mΩ at 25 °C, a gate charge of 58 to 73 nC, and is fully qualified for industrial applications per JEDEC. It supports 100% avalanche testing, complies with RoHS and IEC 61249-2-21 halogen-free standards, and has a junction temperature range of -55 °C to 175 °C. Thermal resistance from junction to case is 0.6 °C/W.
OptiMOS™ 5 power MOSFET 150 V in TOLT for excellent thermal performance
IPTC054N15NM5 is part of the OptiMOS™ 5 power MOSFET in TOLT family: the TO-Leaded top-side cooling package for superior thermal performance. This innovative package combined with the key features of OptiMOS™ 5 technology allows best-in-class products in 150 V as well as high current rating for high-power density designs.
With top-side cooling setup, the drain is exposed at the surface of the package enabling 95 percent of the heat to be dissipated to the heatsink, achieving 20 percent better RthJA and 50 percent improved RthJC compared to TOLL package. With bottom-side cooling packages like TOLL or D2PAK, the heat is dissipated via the PCB to the heatsink causing high power losses.
OptiMOS™ 5 power MOSFET in TOLT targets power tools, light electric vehicles and battery management systems.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPTC054N15NM5 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPTC054N15NM5 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0054 ohms |
| QG | 58 nC |
