Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPW60R070CFD7

Description
Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Edge computing EV charging Telecommunication infrastructure Designers who used this product also designed with 1ED3123MC12H | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes IPP051N15N5 | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET BSC014N04LS | N-Channel Power MOSFET 2EDN7524G | Gate driver ICs 2N7002DW | Small signal/small power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency IPP075N15N3 G N-Channel Power MOSFET BSC011N03LS | N-Channel Power MOSFET IPP023N08N5 | N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant IDH06G65C6 | CoolSiC™ Schottky Diodes 1ED3125MU12F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1ED3123MC12H | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes IPP051N15N5 | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET 1 2 3 4 5
Request a Quote Datasheet
Description
Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Edge computing EV charging Telecommunication infrastructure Designers who used this product also designed with 1ED3123MC12H | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes IPP051N15N5 | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET BSC014N04LS | N-Channel Power MOSFET 2EDN7524G | Gate driver ICs 2N7002DW | Small signal/small power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency IPP075N15N3 G N-Channel Power MOSFET BSC011N03LS | N-Channel Power MOSFET IPP023N08N5 | N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant IDH06G65C6 | CoolSiC™ Schottky Diodes 1ED3125MU12F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1ED3123MC12H | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes IPP051N15N5 | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET 1 2 3 4 5
Request a Quote Datasheet

Suppliers

Company
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Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPW60R070CFD7 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPW60R070CFD7
500V-950V N-Channel Power MOSFET IPW60R070CFD7
Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Edge computing EV charging Telecommunication infrastructure Designers who used this product also designed with 1ED3123MC12H | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes IPP051N15N5 | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET BSC014N04LS | N-Channel Power MOSFET 2EDN7524G | Gate driver ICs 2N7002DW | Small signal/small power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency IPP075N15N3 G N-Channel Power MOSFET BSC011N03LS | N-Channel Power MOSFET IPP023N08N5 | N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant IDH06G65C6 | CoolSiC™ Schottky Diodes 1ED3125MU12F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1ED3123MC12H | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes IPP051N15N5 | N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET 1 2 3 4 5

Infineon’s answer to resonant high power topologies

The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.


Summary of Features

  • Ultra-fast body diode
  • Best-in-class reverse recovery charge (Qrr)
  • Improved reverse diode dv/dt and dif/dt ruggedness
  • Lowest FOM RDS(on) x Qg and Eoss
  • Best-in-class RDS(on)/package combinations

Benefits

  • Best-in-class hard commutation ruggedness
  • Highest reliability for resonant topologies
  • Highest efficiency with outstanding ease-of-use/performance trade-off
  • Enabling increased power density solutions

Potential Applications

Server, Telecom, EV-charging, SMPS, PC power


Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Edge computing
  • EV charging
  • Telecommunication infrastructure

Designers who used this product also designed with


  • 1ED3123MC12H |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • IDH10G65C6 |
    CoolSiC™ Schottky Diodes
  • IPP051N15N5 |
    N-Channel Power MOSFET
  • BSC010N04LS |
    N-Channel Power MOSFET
  • SN7002W |
    Small signal/small power MOSFET
  • BSC014N04LS |
    N-Channel Power MOSFET
  • 2EDN7524G |
    Gate driver ICs
  • 2N7002DW |
    Small signal/small power MOSFET
  • ICE3AR0680JZ |
    CoolSET™ Fixed Frequency
  • IPP075N15N3 G
    N-Channel Power MOSFET
  • BSC011N03LS |
    N-Channel Power MOSFET
  • IPP023N08N5 |
    N-Channel Power MOSFET
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • IDH06G65C6 |
    CoolSiC™ Schottky Diodes
  • 1ED3125MU12F |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1ED3123MC12H |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • IDH10G65C6 |
    CoolSiC™ Schottky Diodes
  • IPP051N15N5 |
    N-Channel Power MOSFET
  • BSC010N04LS |
    N-Channel Power MOSFET
  • SN7002W |
    Small signal/small power MOSFET

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Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R070CFD7 - 826039-IPW60R070CFD7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R070CFD7
826039-IPW60R070CFD7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R070CFD7 826039-IPW60R070CFD7
Manufacturer: Infineon Technologies Win Source Part Number: 826039-IPW60R070CFD7 Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 826039-IPW60R070CFD7
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now
Singapore
600V MOSFET Transistor
285-IPW60R070CFD7
600V MOSFET Transistor 285-IPW60R070CFD7
600V CoolMOSª CFD7 Power Transistor Product overview: IPW60R070CFD7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPW60R070CFD7 can be used for catalog matching and distributor lookup.

600V CoolMOSª CFD7 Power Transistor Product overview: IPW60R070CFD7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPW60R070CFD7 can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPW60R070CFD7 826039-IPW60R070CFD7 285-IPW60R070CFD7
Product Name 500V-950V N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R070CFD7 600V MOSFET Transistor
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0700 ohms
QG 67 nC
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