The IPW60R070CFD7 is a 600V silicon N-channel MOSFET designed for resonant switching topologies such as phase-shift full-bridge and LLC converters. It is packaged in a PG-TO-247-3 case with a maximum continuous drain current of 32 A at TC=150°C and a pulsed drain current of 129 A. The device features a maximum on-state resistance of 70 mΩ, a total gate charge of 67 nC, and a reverse recovery charge of up to 1.14 µC. It meets JEDEC JESD47/20/22 industrial qualification standards and has a thermal resistance from junction to case of 0.8 °C/W. The MOSFET includes an ultra-fast body diode with a maximum diode commutation speed of 1300 A/µs and supports gate voltage swings up to ±20 V static and ±30 V dynamic.
Infineon’s answer to resonant high power topologies
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
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Server, Telecom, EV-charging, SMPS, PC power
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600V CoolMOSª CFD7 Power Transistor Product overview: IPW60R070CFD7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPW60R070CFD7 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 826039-IPW60R070CFD7
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPW60R070CFD7 | 285-IPW60R070CFD7 | 826039-IPW60R070CFD7 |
| Product Name | 500V-950V N-Channel Power MOSFET | 600V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW60R070CFD7 |
| Polarity | N-Channel; N | ||
| Transistor Technology / Material | Si/SiC | ||
| rDS(on) | 0.0700 ohms | ||
| QG | 67 nC |
