Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPZA60R080P7

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated R G reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Designers who used this product also designed with 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IRS4427S | Gate driver ICs

TO-247-4 MOSFETs ROHS