IPZA60R024CM8 is a 600 V CoolMOS™ CM8 N-channel power MOSFET in a PG-TO247-4 package with an integrated fast body diode, designed for high-efficiency switching applications such as datacenter power supplies, EV charging, and UPS systems. It has a maximum drain-source voltage of 650 V, a maximum on-resistance of 24 mΩ, a pulsed drain current of 359 A, and a gate charge of 122 nC. The device features best-in-class thermal performance through .XT interconnection technology, ESD protection with HBM class 2, and commutation ruggedness compliant with JEDEC standards for industrial applications. It supports an extended junction temperature up to 175 °C for transient operation.
600 V CoolMOS™ 8 power transistor
The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.
It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPZA60R024CM8 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPZA60R024CM8 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0240 ohms |
