MOSFET N-CH 25V 35A DIRECTFET Product overview: IRF6898MTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6898MTRPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 25V 35A DIRECTFET
N-Channel 25V 35A (Ta), 213A (Tc) 2.1W (Ta), 78W (Tc) Surface Mount DIRECTFET™ MX
Manufacturer: Infineon Technologies
Win Source Part Number: 1187158-IRF6898MTRPB
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
FET Feature: Schottky Diode (Body)
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DIRECTFET MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: DirectFET Isometric MX
Power Dissipation (Maximum): 2.1W, 78W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 4,800
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 25V
Id - Continuous Drain Current: 35A, 213A
Rds On (Maximum) at Id, Vgs: 1.1mOhm at 35A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.1V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 62nC at 4.5V
Gate Source Voltage (Maximum): ±16V
Input Capacitance (Ciss) (Maximum) at Vds: 5435pF at 13V
MOSFET N-CH 25V 35A DIRECTFET
MOSFET N-CH 25V 35A DIRECTFET
MOSFET 25V 1 N-CH HEXFET 1.1mOhms 35nC
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF6898MTRPBF | IRF6898MTRPBF | IRF6898MTRPBF-ND | 1187158-IRF6898MTRPBF | IRF6898MTRPBF | 376-IRF6898MTRPBF | IRF6898MTRPBF |
| Product Name | 25V 35A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | FETs - Single - IRF6898MTRPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 25V 35A DIRECTFET | MOSFET |
| PD | 2100 milliwatts | 2100 milliwatts | 2100 to 78000 milliwatts | 78000 milliwatts | |||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | |||
| Package Type | Tape & Reel (TR) | DirectFET™ Isometric MX | DirectFET™ Isometric MX | SOT3 | DirectFETTM Isometric MX | ||
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape and Reel | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | |||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel |
