Infineon Technologies AG FETs - Single - IRF6898MTRPBF IRF6898MTRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187158-IRF6898MTRPB F Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET FET Feature: Schottky Diode (Body) Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: DIRECTFET MX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -40°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: DirectFET Isometric MX Power Dissipation (Maximum): 2.1W, 78W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 4,800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 25V Id - Continuous Drain Current: 35A, 213A Rds On (Maximum) at Id, Vgs: 1.1mOhm at 35A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.1V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 62nC at 4.5V Gate Source Voltage (Maximum): ±16V Input Capacitance (Ciss) (Maximum) at Vds: 5435pF at 13V
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187158-IRF6898MTRPB F Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET FET Feature: Schottky Diode (Body) Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: DIRECTFET MX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -40°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: DirectFET Isometric MX Power Dissipation (Maximum): 2.1W, 78W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 4,800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 25V Id - Continuous Drain Current: 35A, 213A Rds On (Maximum) at Id, Vgs: 1.1mOhm at 35A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.1V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 62nC at 4.5V Gate Source Voltage (Maximum): ±16V Input Capacitance (Ciss) (Maximum) at Vds: 5435pF at 13V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRF6898MTRPBF - 1187158-IRF6898MTRPBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRF6898MTRPBF
1187158-IRF6898MTRPBF
FETs - Single - IRF6898MTRPBF 1187158-IRF6898MTRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1187158-IRF6898MTRPB F Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET FET Feature: Schottky Diode (Body) Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: DIRECTFET MX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -40°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: DirectFET Isometric MX Power Dissipation (Maximum): 2.1W, 78W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 4,800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 25V Id - Continuous Drain Current: 35A, 213A Rds On (Maximum) at Id, Vgs: 1.1mOhm at 35A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.1V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 62nC at 4.5V Gate Source Voltage (Maximum): ±16V Input Capacitance (Ciss) (Maximum) at Vds: 5435pF at 13V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187158-IRF6898MTRPBF
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
FET Feature: Schottky Diode (Body)
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DIRECTFET MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: DirectFET Isometric MX
Power Dissipation (Maximum): 2.1W, 78W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 4,800
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 25V
Id - Continuous Drain Current: 35A, 213A
Rds On (Maximum) at Id, Vgs: 1.1mOhm at 35A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.1V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 62nC at 4.5V
Gate Source Voltage (Maximum): ±16V
Input Capacitance (Ciss) (Maximum) at Vds: 5435pF at 13V

Buy Now
Single FETs, MOSFETs - IRF6898MTRPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRF6898MTRPBF
Single FETs, MOSFETs IRF6898MTRPBF
MOSFET N-CH 25V 35A DIRECTFET

MOSFET N-CH 25V 35A DIRECTFET

Supplier's Site Datasheet
Singapore
25V 35A MOSFET Transistor
278-IRF6898MTRPBF
25V 35A MOSFET Transistor 278-IRF6898MTRPBF
MOSFET N-CH 25V 35A DIRECTFET Product overview: IRF6898MTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6898MTRPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 25V 35A DIRECTFET Product overview: IRF6898MTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6898MTRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRF6898MTRPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRF6898MTRPBF-ND
Single FETs, MOSFETs IRF6898MTRPBF-ND
N-Channel 25V 35A (Ta), 213A (Tc) 2.1W (Ta), 78W (Tc) Surface Mount DIRECTFET™ MX

N-Channel 25V 35A (Ta), 213A (Tc) 2.1W (Ta), 78W (Tc) Surface Mount DIRECTFET™ MX

Buy Now Datasheet
MOSFET N-CH 25V 35A DIRECTFET - 376-IRF6898MTRPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 25V 35A DIRECTFET
376-IRF6898MTRPBF
MOSFET N-CH 25V 35A DIRECTFET 376-IRF6898MTRPBF
MOSFET N-CH 25V 35A DIRECTFET

MOSFET N-CH 25V 35A DIRECTFET

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 25V 1 N-CH HEXFET 1.1mOhms 35nC

MOSFET 25V 1 N-CH HEXFET 1.1mOhms 35nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF6898MTRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF6898MTRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF6898MTRPBF
MOSFET N-CH 25V 35A DIRECTFET

MOSFET N-CH 25V 35A DIRECTFET

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1187158-IRF6898MTRPBF IRF6898MTRPBF 278-IRF6898MTRPBF IRF6898MTRPBF-ND 376-IRF6898MTRPBF IRF6898MTRPBF IRF6898MTRPBF
Product Name FETs - Single - IRF6898MTRPBF Single FETs, MOSFETs 25V 35A MOSFET Transistor Single FETs, MOSFETs MOSFET N-CH 25V 35A DIRECTFET MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 25 volts 25 volts 25 volts
QG 62 nC
PD 2100 to 78000 milliwatts 2100 milliwatts 2100 milliwatts 78000 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Unlock Full Specs
to access all available technical data