Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPW65R029CFD7

The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPW65R029CFD7 in TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage. Summary of Features Ultrafast body diode and very low Qrr 650V breakdown voltage Significantly reduced switching losses compared to competition Lowest RDS(on) dependency over temperature Benefits Excellent hard-commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density Outstanding light-load efficiency in industrial SMPS applications Improved full-load efficiency in industrial SMPS applications Price competitiveness compared to alternative offerings in the market Applications EV charging Photovoltaic Server power supply units (PSU) Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDS8265H | Gate driver ICs 1ED3124MU12F | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3125MU12F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDS8265H | Gate driver ICs 1ED3124MU12F | Gate driver ICs 2EDR8259X | Gate driver ICs 1ED3125MU12F | Gate driver ICs 1 2