Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPW60R037CM8 IPW60R037CM8

Description
IPW60R037CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Best-in-class RDS(on)*A Significant reduction of losses Excellent commutation ruggedness Integrated fast body diode .XT interconnection ESD protection Benefits Increased power density Ease of use and fast design-in Low ringing tendency Simplified thermal management Simplified portfolio Potential Applications Power supplies and converters PFC stages & LLC resonant converters High efficiency switching applications e.g.: server, telecom, EV charging, UPS Designers who used this product also designed with IDH12G65C5 | CoolSiC™ Schottky Diodes IDL06G65C5 | CoolSiC™ Schottky Diodes 1ED3123MC12H | Gate driver ICs 1EDB8275F | Gate driver ICs ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs 1EDN8550B | Gate driver ICs IDW12G65C5 | CoolSiC™ Schottky Diodes SN7002W | Small signal/small power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant 2N7002DW | Small signal/small power MOSFET BSC010N04LS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC026N08NS5 | N-Channel Power MOSFET IRLML0030PBF-1 | N-Channel Power MOSFET IKCM15L60GD | Intelligent Power Modules (IPM) IPP051N15N5 | N-Channel Power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency IKCM10H60GA | Intelligent Power Modules (IPM) BSC030N08NS5 | N-Channel Power MOSFET IR11682SPBF | Synchronous Rectification ICs IDH12G65C5 | CoolSiC™ Schottky Diodes IDL06G65C5 | CoolSiC™ Schottky Diodes 1ED3123MC12H | Gate driver ICs 1EDB8275F | Gate driver ICs ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs 1EDN8550B | Gate driver ICs IDW12G65C5 | CoolSiC™ Schottky Diodes SN7002W | Small signal/small power MOSFET 1 2 3 4 5
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Description
IPW60R037CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Best-in-class RDS(on)*A Significant reduction of losses Excellent commutation ruggedness Integrated fast body diode .XT interconnection ESD protection Benefits Increased power density Ease of use and fast design-in Low ringing tendency Simplified thermal management Simplified portfolio Potential Applications Power supplies and converters PFC stages & LLC resonant converters High efficiency switching applications e.g.: server, telecom, EV charging, UPS Designers who used this product also designed with IDH12G65C5 | CoolSiC™ Schottky Diodes IDL06G65C5 | CoolSiC™ Schottky Diodes 1ED3123MC12H | Gate driver ICs 1EDB8275F | Gate driver ICs ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs 1EDN8550B | Gate driver ICs IDW12G65C5 | CoolSiC™ Schottky Diodes SN7002W | Small signal/small power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant 2N7002DW | Small signal/small power MOSFET BSC010N04LS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC026N08NS5 | N-Channel Power MOSFET IRLML0030PBF-1 | N-Channel Power MOSFET IKCM15L60GD | Intelligent Power Modules (IPM) IPP051N15N5 | N-Channel Power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency IKCM10H60GA | Intelligent Power Modules (IPM) BSC030N08NS5 | N-Channel Power MOSFET IR11682SPBF | Synchronous Rectification ICs IDH12G65C5 | CoolSiC™ Schottky Diodes IDL06G65C5 | CoolSiC™ Schottky Diodes 1ED3123MC12H | Gate driver ICs 1EDB8275F | Gate driver ICs ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs 1EDN8550B | Gate driver ICs IDW12G65C5 | CoolSiC™ Schottky Diodes SN7002W | Small signal/small power MOSFET 1 2 3 4 5
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Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPW60R037CM8 - IPW60R037CM8 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPW60R037CM8
IPW60R037CM8
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPW60R037CM8 IPW60R037CM8
IPW60R037CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Best-in-class RDS(on)*A Significant reduction of losses Excellent commutation ruggedness Integrated fast body diode .XT interconnection ESD protection Benefits Increased power density Ease of use and fast design-in Low ringing tendency Simplified thermal management Simplified portfolio Potential Applications Power supplies and converters PFC stages & LLC resonant converters High efficiency switching applications e.g.: server, telecom, EV charging, UPS Designers who used this product also designed with IDH12G65C5 | CoolSiC™ Schottky Diodes IDL06G65C5 | CoolSiC™ Schottky Diodes 1ED3123MC12H | Gate driver ICs 1EDB8275F | Gate driver ICs ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs 1EDN8550B | Gate driver ICs IDW12G65C5 | CoolSiC™ Schottky Diodes SN7002W | Small signal/small power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant 2N7002DW | Small signal/small power MOSFET BSC010N04LS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC026N08NS5 | N-Channel Power MOSFET IRLML0030PBF-1 | N-Channel Power MOSFET IKCM15L60GD | Intelligent Power Modules (IPM) IPP051N15N5 | N-Channel Power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency IKCM10H60GA | Intelligent Power Modules (IPM) BSC030N08NS5 | N-Channel Power MOSFET IR11682SPBF | Synchronous Rectification ICs IDH12G65C5 | CoolSiC™ Schottky Diodes IDL06G65C5 | CoolSiC™ Schottky Diodes 1ED3123MC12H | Gate driver ICs 1EDB8275F | Gate driver ICs ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs 1EDN8550B | Gate driver ICs IDW12G65C5 | CoolSiC™ Schottky Diodes SN7002W | Small signal/small power MOSFET 1 2 3 4 5

IPW60R037CM8 600 V CoolMOS™ 8 power transistor

The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.

It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.


Summary of Features

  • Best-in-class RDS(on)*A
  • Significant reduction of losses
  • Excellent commutation ruggedness
  • Integrated fast body diode
  • .XT interconnection
  • ESD protection

Benefits

  • Increased power density
  • Ease of use and fast design-in
  • Low ringing tendency
  • Simplified thermal management
  • Simplified portfolio

Potential Applications

  • Power supplies and converters
  • PFC stages & LLC resonant converters
  • High efficiency switching applications e.g.: server, telecom, EV charging, UPS

Designers who used this product also designed with


  • IDH12G65C5 |
    CoolSiC™ Schottky Diodes
  • IDL06G65C5 |
    CoolSiC™ Schottky Diodes
  • 1ED3123MC12H |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • ICE3PCS01G |
    PFC-CCM (continuous conduction mode) ICs
  • 1EDN8550B |
    Gate driver ICs
  • IDW12G65C5 |
    CoolSiC™ Schottky Diodes
  • SN7002W |
    Small signal/small power MOSFET
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • 2N7002DW |
    Small signal/small power MOSFET
  • BSC010N04LS |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • IRLML0030PBF-1 |
    N-Channel Power MOSFET
  • IKCM15L60GD |
    Intelligent Power Modules (IPM)
  • IPP051N15N5 |
    N-Channel Power MOSFET
  • ICE3AR0680JZ |
    CoolSET™ Fixed Frequency
  • IKCM10H60GA |
    Intelligent Power Modules (IPM)
  • BSC030N08NS5 |
    N-Channel Power MOSFET
  • IR11682SPBF |
    Synchronous Rectification ICs
  • IDH12G65C5 |
    CoolSiC™ Schottky Diodes
  • IDL06G65C5 |
    CoolSiC™ Schottky Diodes
  • 1ED3123MC12H |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • ICE3PCS01G |
    PFC-CCM (continuous conduction mode) ICs
  • 1EDN8550B |
    Gate driver ICs
  • IDW12G65C5 |
    CoolSiC™ Schottky Diodes
  • SN7002W |
    Small signal/small power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPW60R037CM8
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - 600 V CoolMOS™ 8 - IPW60R037CM8
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0370 ohms
QG 79 nC
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