Infineon Technologies AG Single FETs, MOSFETs IRF530NL

N-Channel 100V 17A (Tc) 3.8W (Ta), 70W (Tc) Through Hole TO-262

MOSFET N-CH 100V 17A TO262 Product overview: IRF530NL from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF530NL can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1187047-IRF530NL
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 3.8W, 70W
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 17A
Rds On (Maximum) at Id, Vgs: 90mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 37nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 920pF at 25V