Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPW65R045C7

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest R_DS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Summary of Features

• 650V voltage
• Revolutionary best-in-class R _DS(on)/package
• Reduced energy stored in output capacitance (Eoss)
• Lower gate charge Q_g
• Space saving through use of smaller packages or reduction of parts
• 12 years manufacturing experience in superjunction technology

Benefits

• Improved safety margin and suitable for both SMPS and solar inverter applications
• Lowest conduction losses/package
• Low switching losses
• Better light load efficiency
• Increasing power density
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• PC power

Applications

• 48 V intermediate bus converter (IBC)
• EV charging
• Residential air conditioning: Smart (IoT) and efficient cooling
• Telecommunication infrastructure

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Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247 Tube Product overview: IPW65R045C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 46A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 46A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW65R045C7 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 205253-IPW65R045C7
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 227W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 46A (Tc)
Gate-Source Threshold Voltage: 4V @ 1.25mA
Max Gate Charge: 93nC @ 10V
Max Input Capacitance: 4340pF @ 400V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 24.9A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

46A, 650V, 0.045OHM, N-CHANNEL M

MOSFET N-Channel 650V 46A CoolMOS TO247

MOSFET N-Channel 650V 46A CoolMOS TO247

MOSFET N-Channel 650V 46A CoolMOS TO247