Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
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MOSFET N-Channel 650V 46A CoolMOS TO247
MOSFET N-Channel 650V 46A CoolMOS TO247
MOSFET N-Channel 650V 46A CoolMOS TO247
46A, 650V, 0.045OHM, N-CHANNEL M
Manufacturer: Infineon Technologies
Win Source Part Number: 205253-IPW65R045C7
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 227W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 46A (Tc)
Gate-Source Threshold Voltage: 4V @ 1.25mA
Max Gate Charge: 93nC @ 10V
Max Input Capacitance: 4340pF @ 400V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 24.9A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247 Tube Product overview: IPW65R045C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 46A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 46A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPW65R045C7 can be used for catalog matching and distributor lookup.
MOSFET N-Ch 650V 46A TO247-3 CoolMOS C7
| Infineon Technologies AG | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPW65R045C7 | 8977633 | 8977633P | IPW65R045C7 | 205253-IPW65R045C7 | 278-IPW65R045C7 | IPW65R045C7 |
| Product Name | 500V-950V N-Channel Power MOSFET | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R045C7 | 650V 46A MOSFET Transistor | MOSFET |
| Polarity | N-Channel; N | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |
| Transistor Technology / Material | Si/SiC | MOSFET (Metal Oxide) | |||||
| rDS(on) | 0.0450 ohms | ||||||
| QG | 93 nC | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |