Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPW65R065C7

Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Refrigerators and freezers Solutions for inductive wireless charging above 50 W EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with BSC010N04LS6 | N-Channel Power MOSFET 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes 2EDN7524G | Gate driver ICs BSC010N04LS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC010N04LS6 | N-Channel Power MOSFET 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes 2EDN7524G | Gate driver ICs BSC010N04LS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1 2
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Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Refrigerators and freezers Solutions for inductive wireless charging above 50 W EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with BSC010N04LS6 | N-Channel Power MOSFET 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes 2EDN7524G | Gate driver ICs BSC010N04LS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC010N04LS6 | N-Channel Power MOSFET 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes 2EDN7524G | Gate driver ICs BSC010N04LS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1 2
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Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPW65R065C7 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPW65R065C7
500V-950V N-Channel Power MOSFET IPW65R065C7
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Refrigerators and freezers Solutions for inductive wireless charging above 50 W EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with BSC010N04LS6 | N-Channel Power MOSFET 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes 2EDN7524G | Gate driver ICs BSC010N04LS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC010N04LS6 | N-Channel Power MOSFET 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IDH10G65C6 | CoolSiC™ Schottky Diodes 2EDN7524G | Gate driver ICs BSC010N04LS | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant 1 2

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.


Summary of Features

  • 650V voltage
  • Revolutionary best-in-class R DS(on)/package
  • Reduced energy stored in output capacitance (Eoss)
  • Lower gate charge Qg
  • Space saving through use of smaller packages or reduction of parts
  • 12 years manufacturing experience in superjunction technology

Benefits

  • Improved safety margin and suitable for both SMPS and solar inverter applications
  • Lowest conduction losses/package
  • Low switching losses
  • Better light load efficiency
  • Increasing power density
  • Outstanding CoolMOS™ quality

Potential Applications

  • Telecom
  • Server
  • Solar
  • PC power

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Refrigerators and freezers
  • Solutions for inductive wireless charging above 50 W

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • BSC010N04LS6 |
    N-Channel Power MOSFET
  • 1EDN8511B |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • IDH10G65C6 |
    CoolSiC™ Schottky Diodes
  • 2EDN7524G |
    Gate driver ICs
  • BSC010N04LS |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • BSC010N04LS6 |
    N-Channel Power MOSFET
  • 1EDN8511B |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • IDH10G65C6 |
    CoolSiC™ Schottky Diodes
  • 2EDN7524G |
    Gate driver ICs
  • BSC010N04LS |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant

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Supplier's Site Datasheet
MOSFET Transistor 2088-IPW65R065C7
MOSFETs HIGH POWER_NEW Product overview: IPW65R065C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPW65R065C7 can be used for catalog matching and distributor lookup.

MOSFETs HIGH POWER_NEW Product overview: IPW65R065C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPW65R065C7 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R065C7 - 1186479-IPW65R065C7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R065C7
1186479-IPW65R065C7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R065C7 1186479-IPW65R065C7
Manufacturer: Infineon Technologies Win Source Part Number: 1186479-IPW65R065C7 Manufacturer Homepage: www.infineon.com Alternative Parts (Cross-Reference): STW56N65DM2; SCT3060ALC11; IPW65R080CFDAXK; Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1186479-IPW65R065C7
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): STW56N65DM2; SCT3060ALC11; IPW65R080CFDAXK;
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now
Sheung Wan, Hong Kong
MOSFET HIGH POWER_NEW

MOSFET HIGH POWER_NEW

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPW65R065C7 2088-IPW65R065C7 1186479-IPW65R065C7 IPW65R065C7
Product Name 500V-950V N-Channel Power MOSFET MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPW65R065C7 MOSFET
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0650 ohms
QG 64 nC
TJ -55 to 150 C (-67 to 302 F)
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