MOSFET N-CH 20V 27A 8SO Product overview: IRF6201PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 27A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 27A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6201PBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1187083-IRF6201PBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2.5W
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,800
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 27A
Rds On (Maximum) at Id, Vgs: 2.45mOhm at 27A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 1.1V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 195nC at 4.5V
Gate Source Voltage (Maximum): ±12V
Input Capacitance (Ciss) (Maximum) at Vds: 8555pF at 16V
N-Channel 20V 27A (Ta) 2.5W (Ta) Surface Mount 8-SO
(PRICE/EA) MOSFET TRANSISTOR, N CHANNEL, 27 A, 20 V, 0.0019 OHM, 4.5 V, 1.1 V ;ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 20V 27A 8SO
MOSFET N-CH 20V 27A 8SO
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Radwell International | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRF6201PBF | 1187083-IRF6201PBF | IRF6201PBF-ND | 66776978 | IRF6201PBF | IRF6201PBF |
| Product Name | 20V 27A MOSFET Transistor | FETs - Single - IRF6201PBF | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| PD | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | Tube | SOT3 | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | |
| Packing Method | Tube | Tube; Tube | Tube; Tube | |||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel |
