Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7105TRPBF IRF7105TRPBF

Manufacturer: Infineon Technologies
Win Source Part Number: 017485-IRF7105TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Family Name: IRF7105
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 3.5A, 2.3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 330pF @ 15V
Maximum Rds On at Id,Vgs: 100 mOhm @ 1A, 10V
Alternative Parts (Cross-Reference): MMDF2C02E; MMDF2C02ER2; MMDF1300R2; IRF7105TR;
Introduction Date: November 04, 1997
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

MOSFET N/P-CH 25V 3.5A/2.3A 8SO Product overview: IRF7105TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 3.5A, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 3.5A, 2.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7105TRPBF can be used for catalog matching and distributor lookup.

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Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA