Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPT60R045CFD7 IPT60R045CFD7

Infineon’s answer to resonant high-power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high-voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse-recovery time (trr) in the market. Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Applications 48 V intermediate bus converter (IBC) Edge computing Power conversion Telecommunication infrastructure Designers who used this product also designed with 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs BSC023N08NS5SC | N-Channel Power MOSFET IMT65R039M1H | Silicon Carbide MOSFET Discretes BSC026N08NS5 | N-Channel Power MOSFET BSC021N08NS5 | N-Channel Power MOSFET 1ED3125MU12F | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2110S06M | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs BSC023N08NS5SC | N-Channel Power MOSFET IMT65R039M1H | Silicon Carbide MOSFET Discretes BSC026N08NS5 | N-Channel Power MOSFET BSC021N08NS5 | N-Channel Power MOSFET 1 2 3 4