The IRF7324 is a dual P-channel power MOSFET in an SO-8 package, designed for battery and load management applications. It features a maximum drain-source voltage of -20V, a continuous drain current of -9.0A at 25°C, and an on-resistance of 0.018Ω at -4.5V gate-source voltage. The device has a low profile of less than 1.1mm and is lead-free. Thermal resistance junction-to-ambient is 62.5°C/W, and it operates over a junction temperature range of -55°C to +150°C. The part meets RoHS compliance and is qualified for consumer market applications.
IR MOSFET -20V in a SO-8 package
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
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MOSFET 2P-CH 20V 9A 8SO Product overview: IRF7324 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF7324 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 284280-IRF7324
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 63nC @ 5V
Max Input Capacitance: 2940pF @ 15V
Maximum Rds On at Id,Vgs: 18 mOhm @ 9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Mosfet Array 2 P-Channel (Dual) 20V 9A 2W Surface Mount 8-SO
MOSFET 2P-CH 20V 9A 8SO
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | IRF7324 | 289-IRF7324 | 284280-IRF7324 | IRF7324-ND | IRF7324 |
| Product Name | P-Channel Power MOSFET | 20V 9A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF7324 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P+P | P-Channel | |||
| Transistor Technology / Material | Si/SiC | ||||
| TJ | 150 C (302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SO-8; SO8 | Tube | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" |
