Infineon Technologies AG 200V 9.3A MOSFET Transistor IRF630NSPBF

MOSFET N-CH 200V 9.3A D2PAK Product overview: IRF630NSPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF630NSPBF can be used for catalog matching and distributor lookup.

N-Channel 200V 9.3A (Tc) 82W (Tc) Surface Mount D2PAK

Manufacturer: Infineon Technologies
Win Source Part Number: 1187102-IRF630NSPBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 82W
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 9.3A
Rds On (Maximum) at Id, Vgs: 300mOhm at 5.4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 575pF at 25V