The IRF6646 is an N-channel Power MOSFET optimized for primary switching in isolated DC-DC converters and secondary-side synchronous rectification, housed in a DirectFET MN package with a height of 0.7 mm. It has a maximum drain-to-source voltage of 80 V and a gate-to-source voltage rating of ±20 V. The device features a typical on-resistance of 7.6 mΩ at 10 V gate drive and 12 A drain current, with a total gate charge of 36 nC. It supports dual-sided cooling, is compatible with standard surface mount techniques, and meets RoHS and lead-free (up to 260°C reflow) requirements. The package allows for high thermal performance with a junction-to-case thermal resistance of 1.4 °C/W, and it complies with AEC-Q200 qualification standards.
80V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MN package
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRF6646 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0095 ohms |
