Infineon Technologies AG 30V 32A MOSFET Transistor IRF6635

MOSFET N-CH 30V 32A DIRECTFET Product overview: IRF6635 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 32A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 32A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6635 can be used for catalog matching and distributor lookup.

N-Channel 30V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

Manufacturer: Infineon Technologies
Win Source Part Number: 1187148-IRF6635
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DIRECTFET MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: DirectFET Isometric MX
Power Dissipation (Maximum): 2.8W, 89W
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 4,800
MSL Level: 3 (168 Hours)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 32A, 180A
Rds On (Maximum) at Id, Vgs: 1.8mOhm at 32A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.35V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 71nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 5970pF at 15V