The IRF6644PbF is a 100V N-channel Power MOSFET in a DirectFET™ MN package with a profile of 0.7mm, designed for high-efficiency isolated DC-DC converters and synchronous rectification. It has a maximum on-state resistance of 13mΩ at 10V gate voltage, a continuous drain current of 57A at 25°C, and supports dual-sided cooling. The device is RoHS compliant and qualified to JEDEC JESD47F with MSL1 moisture sensitivity level. The part is suitable for applications requiring low conduction losses and compact thermal performance.
100V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MN package
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Summary of Features
Benefits
Potential Applications
N-Channel 100V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
MOSFET N-CH 100V 10.3A DIRECTFET Product overview: IRF6644 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 10.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 10.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF6644 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 59748-IRF6644
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: DIRECTFET MN
Dimension: DirectFET Isometric MN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 10.3A (Ta), 60A (Tc)
Gate-Source Threshold Voltage: 4.8V @ 150μA
Max Gate Charge: 47nC @ 10V
Max Input Capacitance: 2210pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 10.3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Integrated Circuits (ICs) - Transistors - MOSFETs
| Infineon Technologies AG | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRF6644 | IRF6644-ND | 278-IRF6644 | 59748-IRF6644 | IRF6644 |
| Product Name | N-Channel Power MOSFET | Single FETs, MOSFETs | 100V 10.3A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF6644 | Integrated Circuits (ICs) - Transistors - MOSFETs |
| Polarity | N-Channel; N | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Si/SiC | ||||
| rDS(on) | 0.0130 ohms | ||||
| TJ | 150 C (302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
