Bipolar RF Transistors Datasheets

Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
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Bipolar RF Transistors Datasheets From:
Headquarters
Infineon Technologies AG
Germany
New Yorker Electronics Co., Inc.
Northvale, NJ
ODG (Origin Data Global)
China
Qorvo
United States
Richardson RFPD
United States
RS Components, Ltd.
United Kingdom
Win Source Electronics
United States
LIXINC Electronics Co., Limited
China
Skyworks Solutions, Inc.
United States
TE Connectivity
United States
Texas Instruments
United States
Acme Chip Technology Co., Limited
China
Integra Technologies, Inc.
El Segundo, CA
LCSC Electronics Technology (HK) Limited
China
MACOM
Lowell, MA
Northrop Grumman Corporation
Falls Church, VA
ROHM Semiconductor GmbH
Germany
Semicoa
Costa Mesa, CA
Shenzhen Shengyu Electronics Technology Limited
China
Toshiba America, Inc.
New York, NY
TT Semiconductor, Inc.
Anaheim, CA
Utmel Electronic Limited
China
VAST STOCK CO., LIMITED
Hong Kong
ABLIC Inc.
United States
Advanced Semiconductor, Inc.
United States
Allied Electronics, Inc.
Fort Worth, TX
Amphenol Corporation
United States
Ampleon
United States
Anhui Anmei Semiconductor Co., Ltd.
China
Assmann WSW Components, Inc.
United States
Belden Inc.
United States
Born Semiconductor (Shenzhen) Co., Ltd.
China
DOWOSEMI Technology Co., Ltd.
China
EDAC, Inc.
Canada
Foshan Blue Rocket Electronics Co.,Ltd.
China
Fuji Electric Global
Japan
FuxinSemi Semiconductor (Shenzhen) Co., Ltd.
China
Goodwork Semiconductor Co., Ltd.
Taiwan
Guangdong Fenghua Advanced Technology Group Co., Ltd.
China
Guangdong Juxing Electronic Technology Co., Ltd.
China
Guangdong Shikues Micro Industrial Co., Ltd
China
Guangdong YFW Electronics Co, Ltd.
China
HARTING Inc. of North America
Elgin, IL
Hunan Jinxin Technology Co., Ltd.
Changsha City, Hunan
JCET Group
Milpitas, CA
Jiangsu Changjing Electronics Technology Co., Ltd
China
Jiangsu High Diode Semiconductor Co., Ltd.
China
JSMicro Semiconductor Co., Ltd.
China
Kexin Co., Ltd.
China
Kycon, Inc.
United States
LAPIS Semiconductor
Japan
Leshan Radio Company, Ltd.
China
Leshan Radio Co., Ltd.
China
Luguang Electronic Technology CO.,LTD.
China
Messenko Semiconductor
Taiwan
Microchip Technology, Inc.
United States
Mitsubishi Corporation
Japan
NorComp
United States
NXP Semiconductors
United States
NXP USA, Inc.
Austin, TX
OmniVision Technologies, Inc.
United States
Parallax, Inc.
United States
Powerex, Inc.
United States
pSemi
United States
ROHM Co., Ltd.
Japan
Royal Philips Electronics
United States
Sanyo Machine America
United States
Semikron, Inc.
Hudson, NH
Shandong Jingdao Microelectronics Co., Ltd.
China
Shenzhen Hottech Electronics Co., Ltd.
China
Shenzhen Huaxuanyang Electronic Co., Ltd.
China
Shenzhen Luguang Electronic Technology Co., Ltd.
China
ShenZhen SlkorMicro Semicon Co., Ltd.
China
Shenzhen SPTECH Micro-electronics Co., Ltd.
China
Siemens AG
Germany
STMicroelectronics, Inc.
United States
Taiwan Semiconductor Manufacturing Company, Ltd.
United States
Taizhou Electronics Co., Ltd.
China
Teledyne Relays
United States
THAT Corporation
United States
Toshiba Imaging Systems Division
Irvine, CA
Toshiba Semiconductor & Storage Products
United States
TRINAMIC Motion Control GmbH & Co. KG.
Germany
TT Electronics
United States
Unisonic Technologies Co., Ltd.
China
Vishay Precision Group
United States
Welwyn Components, Ltd.
United Kingdom
Yangzhou Yangjie Electronic Technology Co., Ltd.
China