Broadcom Inc. Bipolar RF Transistors AT-30511-TR1G

Description
RF TRANS NPN 5.5V SOT143
Request a Quote Datasheet
Description
RF TRANS NPN 5.5V SOT143
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - AT-30511-TR1G - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
AT-30511-TR1G
Bipolar RF Transistors AT-30511-TR1G
RF TRANS NPN 5.5V SOT143

RF TRANS NPN 5.5V SOT143

Supplier's Site Datasheet
Bipolar RF Transistors - AT-30511-TR1G-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
AT-30511-TR1G-ND
Bipolar RF Transistors AT-30511-TR1G-ND
RF Transistor NPN 5.5V 8mA 100mW Surface Mount SOT-143

RF Transistor NPN 5.5V 8mA 100mW Surface Mount SOT-143

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - AT-30511-TR1G - 199401-AT-30511-TR1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - AT-30511-TR1G
199401-AT-30511-TR1G
TRANSISTORS - RF Transistors (BJT) - AT-30511-TR1G 199401-AT-30511-TR1G
Manufacturer: Broadcom Limited Win Source Part Number: 199401-AT-30511-TR1G Packaging: Reel - TR Mounting: SMD (SMT) Gain: 14dB to 16dB Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.1dB to 1.4dB @ 900MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-143 Maximum Current Collector: 8mA VCEO Maximum Collector-Emitter Breakdown Voltage: 5.5V Typical Gain (hFE) (Min): 70 @ 1mA, 2.7V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Broadcom Limited
Win Source Part Number: 199401-AT-30511-TR1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 14dB to 16dB
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.1dB to 1.4dB @ 900MHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-143
Maximum Current Collector: 8mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 5.5V
Typical Gain (hFE) (Min): 70 @ 1mA, 2.7V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - AT-30511-TR1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
AT-30511-TR1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) AT-30511-TR1G
RF TRANS NPN 5.5V SOT143

RF TRANS NPN 5.5V SOT143

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number AT-30511-TR1G AT-30511-TR1G-ND 199401-AT-30511-TR1G AT-30511-TR1G
Product Name Bipolar RF Transistors Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - AT-30511-TR1G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN NPN; NPN
Package Type SOT143; TO-253-4, TO-253AA SOT143; TO-253-4, TO-253AA SOT3; SOT-143
IC(max) 8 milliamps
VCEO 5.5 volts 5.5 volts
Power Gain 14 dB
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