Broadcom Inc. Bipolar RF Transistors AT-41533-TR1G

Description
RF Transistor NPN 12V 50mA 225mW Surface Mount SOT-23
Request a Quote Datasheet
Description
RF Transistor NPN 12V 50mA 225mW Surface Mount SOT-23
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - 516-1570-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
516-1570-2-ND
Bipolar RF Transistors 516-1570-2-ND
RF Transistor NPN 12V 50mA 225mW Surface Mount SOT-23

RF Transistor NPN 12V 50mA 225mW Surface Mount SOT-23

Buy Now Datasheet
Bipolar RF Transistors - AT-41533-TR1G - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
AT-41533-TR1G
Bipolar RF Transistors AT-41533-TR1G
RF TRANS NPN 12V SOT23

RF TRANS NPN 12V SOT23

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - AT-41533-TR1G - 127622-AT-41533-TR1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - AT-41533-TR1G
127622-AT-41533-TR1G
TRANSISTORS - RF Transistors (BJT) - AT-41533-TR1G 127622-AT-41533-TR1G
Manufacturer: Broadcom Limited Win Source Part Number: 127622-AT-41533-TR1G Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9dB to 14.5dB Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB to 1.6dB @ 900MHz to 2.4GHz Family Name: AT-41533 Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 30 @ 5mA, 5V Maximum Power Dissipation: 225mW Alternative Parts (Cross-Reference): 2SC5064-Y; 2SC4185; 2SC4186; Introduction Date: May 31, 2005 ECCN: EAR99 Country of Origin: Malaysia, Thailand Estimated EOL Date: Obsolete Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: Broadcom Limited
Win Source Part Number: 127622-AT-41533-TR1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9dB to 14.5dB
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB to 1.6dB @ 900MHz to 2.4GHz
Family Name: AT-41533
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 225mW
Alternative Parts (Cross-Reference): 2SC5064-Y; 2SC4185; 2SC4186;
Introduction Date: May 31, 2005
ECCN: EAR99
Country of Origin: Malaysia, Thailand
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - AT-41533-TR1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
AT-41533-TR1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) AT-41533-TR1G
RF TRANS NPN 12V SOT23

RF TRANS NPN 12V SOT23

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 516-1570-2-ND AT-41533-TR1G 127622-AT-41533-TR1G AT-41533-TR1G
Product Name Bipolar RF Transistors Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - AT-41533-TR1G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN; NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23
IC(max) 50 milliamps 50 milliamps
VCEO 12 volts 12 volts 12 volts
Power Gain 9 dB 30 dB
Unlock Full Specs
to access all available technical data