The 4N35-560E is a phototransistor optocoupler in a 300 mil DIP-6 package with surface-mount gull-wing leads and tape and reel packaging, designed for signal transmission between circuits of different potentials. It features a minimum current transfer ratio of 100% at 10 mA input current, a typical rise time of 3 µs, and an isolation voltage of 3550 Vrms. The device is RoHS 6 compliant, UL approved, CSA approved, and meets IEC/EN/DIN EN 60747-5-2 safety standards.
Transistor Output Optocoupler, 1-Element, 3550V Isolation, 0.300 INCH, ROHS COMPLIANT, SMD, DIP-6 Product overview: 4N35-560E from Broadcom is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 3550V, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, 3550V, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N35-560E can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N35-560E |
| Product Name | SMD 3550V DIP Bipolar Transistor |
| IC(max) | 100 milliamps |
