Broadcom Inc. Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
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| Product Name | Notes |
|---|---|
| ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 surface mount plastic package. | |
| Avago Technologies has combined its industry leading E-PHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise... | |
| Avago Technologies's ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in low cost surface mount SOT-89 package. The combination of low noise figure and high output... | |
| Enhanced-mode PHEMT technology requires only a single positive voltage source. This high gain, high linearity, low noise transistor is optimized for receiver designs in cellular/PCS base stations, MMDS and other... | |
| Enhanced-mode PHEMT technology requires only a single positive voltage source. This high gain, high linearity, low noise transistor is optimized for receiver designs in cellular/PCS/WCDMA base stations, wireless local loop... | |
| Enhanced-mode PHEMT technology requires only a single positive voltage source. This low noise, high gain, high linearity transistor is optimized for low current receiver designs in cellular/PCS and WCDMA handsets,... | |
| Microcurrent device offering good RF performance at 1mA-10mA. The AT-310XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=0.9dB, Gain=13dB... | |
| Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB... | |
| Microcurrent device offering good RF performance at 1mA-5mA. The AT-305XX is housed in two packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1.1dB, Gain=16dB at 3V,... | |
| Single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in the 50MHz to 6... | |
| The ATF-501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in... | |
| The ATF-521P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in... | |
| This Low Current Single Voltage Enhanced Mode E-pHEMT GaAs FET comes packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low... | |
| This Single Voltage Enhanced Mode E-pHEMT GaAs FET comes packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure... | |
| Ultra low noise PHEMT packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure is optimized for the design... | |
| Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS base station and other wireless RF applications, high part-to-part consistency, and excellent reliability. | |
| Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS handset and other wireless RF applications, high part-to-part consistency, and excellent reliability. The... | |
| Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical DBS and other wireless RF applications. NF=1.0dB, Ga=9.4dB, P1dB= 5dBm at 2V, 15mA (12... |
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