Broadcom Inc. Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 surface mount plastic package.
Avago Technologies has combined its industry leading E-PHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise...
Avago Technologies has combined its industry leading E-PHEMT technology with a revolutionary chip scale package. The VMMK-1225 can produce an LNA with high dynamic range, high gain and low noise...
Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias...
Avago Technologies has combined its industry leadingE-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and...
Avago Technologies's ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in low cost surface mount SOT-89 package. The combination of low noise figure and high output...
Enhanced-mode PHEMT technology requires only a single positive voltage source. This high gain, high linearity, low noise transistor is optimized for receiver designs in cellular/PCS base stations, MMDS and other...
Enhanced-mode PHEMT technology requires only a single positive voltage source. This high gain, high linearity, low noise transistor is optimized for receiver designs in cellular/PCS/WCDMA base stations, wireless local loop...
Enhanced-mode PHEMT technology requires only a single positive voltage source. This low noise, high gain, high linearity transistor is optimized for low current receiver designs in cellular/PCS and WCDMA handsets,...
Microcurrent device offering good RF performance at 1mA-10mA. The AT-310XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=0.9dB, Gain=13dB...
Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB...
Microcurrent device offering good RF performance at 1mA-5mA. The AT-305XX is housed in two packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1.1dB, Gain=16dB at 3V,...
Single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in the 50MHz to 6...
The ATF-501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in...
The ATF-521P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in...
This Low Current Single Voltage Enhanced Mode E-pHEMT GaAs FET comes packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low...
This Single Voltage Enhanced Mode E-pHEMT GaAs FET comes packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure...
Ultra low noise PHEMT packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure is optimized for the design...
Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS base station and other wireless RF applications, high part-to-part consistency, and excellent reliability.
Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical cellular/PCS handset and other wireless RF applications, high part-to-part consistency, and excellent reliability. The...
Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical DBS and other wireless RF applications. NF=1.0dB, Ga=9.4dB, P1dB= 5dBm at 2V, 15mA (12...