The 4N35-000E is a general-purpose phototransistor optocoupler in a 300 mil DIP-6 package, featuring a 3550 Vrms isolation voltage and a minimum current transfer ratio of 100% at 10 mA input current. It has a typical response time of 3 µs and is RoHS 6 fully compliant. The device is UL, CSA, and IEC/EN/DIN EN 60747-5-2 approved, with a maximum forward current of 60 mA and a collector-emitter voltage rating of 30 V. The package dimensions are 7.3 ± 0.5 mm in width, 7.62 ± 0.3 mm in lead spacing, and 3.5 ± 0.5 mm in height.
1-Ch Transistor Optocoupler, 3.55kV Isolation, DIP, 60mA IF Product overview: 4N35-000E from Broadcom is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.55kV, 60mA, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 3.55kV, 60mA, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N35-000E can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N35-000E |
| Product Name | 3.55kV 60mA DIP Bipolar Transistor |
| IC(max) | 100 milliamps |
