Broadcom Inc. Bipolar RF Transistors AT-32011-TR1G

Description
RF Transistor NPN 5.5V 32mA 200mW Surface Mount SOT-143
  • Bipolar RF Transistors - 516-1564-2-ND - DigiKey
    DigiKey
  • Bipolar RF Transistors - AT-32011-TR1G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - RF Transistors (BJT) - AT-32011-TR1G - 097070-AT-32011-TR1G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - AT-32011-TR1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
RF Transistor NPN 5.5V 32mA 200mW Surface Mount SOT-143
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - 516-1564-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
516-1564-2-ND
Bipolar RF Transistors 516-1564-2-ND
RF Transistor NPN 5.5V 32mA 200mW Surface Mount SOT-143

RF Transistor NPN 5.5V 32mA 200mW Surface Mount SOT-143

Buy Now Datasheet
Bipolar RF Transistors - AT-32011-TR1G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
AT-32011-TR1G
Bipolar RF Transistors AT-32011-TR1G
RF TRANS NPN 5.5V SOT143

RF TRANS NPN 5.5V SOT143

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
10GHz 32mA 5.5V Bipolar Transistor
283-AT-32011-TR1G
10GHz 32mA 5.5V Bipolar Transistor 283-AT-32011-TR1G
RF NPN Transistor, 10GHz, 32mA, 5.5V, SOT-143 Product overview: AT-32011-TR1G from Broadcom is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10GHz, 32mA, 5.5V. Search-friendly keywords include transistor, BJT, switching, amplification, 10GHz, 32mA, 5.5V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-AT-32011-TR1G can be used for catalog matching and distributor lookup.

RF NPN Transistor, 10GHz, 32mA, 5.5V, SOT-143 Product overview: AT-32011-TR1G from Broadcom is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10GHz, 32mA, 5.5V. Search-friendly keywords include transistor, BJT, switching, amplification, 10GHz, 32mA, 5.5V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-AT-32011-TR1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - AT-32011-TR1G - 097070-AT-32011-TR1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - AT-32011-TR1G
097070-AT-32011-TR1G
TRANSISTORS - RF Transistors (BJT) - AT-32011-TR1G 097070-AT-32011-TR1G
Manufacturer: Broadcom Limited Win Source Part Number: 097070-AT-32011-TR1G Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12.5dB to 14dB Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB to 1.3dB @ 900MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-143 Maximum Current Collector: 32mA VCEO Maximum Collector-Emitter Breakdown Voltage: 5.5V Typical Gain (hFE) (Min): 70 @ 2mA, 2.7V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Broadcom Limited
Win Source Part Number: 097070-AT-32011-TR1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12.5dB to 14dB
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB to 1.3dB @ 900MHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-143
Maximum Current Collector: 32mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 5.5V
Typical Gain (hFE) (Min): 70 @ 2mA, 2.7V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - AT-32011-TR1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
AT-32011-TR1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) AT-32011-TR1G
RF TRANS NPN 5.5V SOT143

RF TRANS NPN 5.5V SOT143

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 516-1564-2-ND AT-32011-TR1G 283-AT-32011-TR1G 097070-AT-32011-TR1G AT-32011-TR1G
Product Name Bipolar RF Transistors Bipolar RF Transistors 10GHz 32mA 5.5V Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - AT-32011-TR1G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN NPN; NPN
Package Type SOT143; TO-253-4, TO-253AA SOT143; TO-253-4, TO-253AA SOT3; SOT-143
IC(max) 32 milliamps 32 milliamps 32 milliamps
VCEO 5.5 volts 5.5 volts 5.5 volts 5.5 volts
Power Gain 12.5 dB 70 dB
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