Broadcom Inc. Bipolar RF Transistors AT-32033-TR1G

Description
RF TRANS NPN 5.5V SOT23
Request a Quote Datasheet
Description
RF TRANS NPN 5.5V SOT23
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - AT-32033-TR1G - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
AT-32033-TR1G
Bipolar RF Transistors AT-32033-TR1G
RF TRANS NPN 5.5V SOT23

RF TRANS NPN 5.5V SOT23

Supplier's Site Datasheet
Bipolar RF Transistors - 516-1566-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
516-1566-2-ND
Bipolar RF Transistors 516-1566-2-ND
RF Transistor NPN 5.5V 32mA 200mW Surface Mount SOT-23

RF Transistor NPN 5.5V 32mA 200mW Surface Mount SOT-23

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - AT-32033-TR1G - 010318-AT-32033-TR1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - AT-32033-TR1G
010318-AT-32033-TR1G
TRANSISTORS - RF Transistors (BJT) - AT-32033-TR1G 010318-AT-32033-TR1G
Manufacturer: Broadcom Limited Win Source Part Number: 010318-AT-32033-TR1G Packaging: Reel - TR Mounting: SMD (SMT) Gain: 11dB to 12.5dB Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB to 1.3dB @ 900MHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 32mA VCEO Maximum Collector-Emitter Breakdown Voltage: 5.5V Typical Gain (hFE) (Min): 70 @ 2mA, 2.7V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Quantity per package: 3k pcs

Manufacturer: Broadcom Limited
Win Source Part Number: 010318-AT-32033-TR1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 11dB to 12.5dB
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB to 1.3dB @ 900MHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23
Maximum Current Collector: 32mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 5.5V
Typical Gain (hFE) (Min): 70 @ 2mA, 2.7V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - AT-32033-TR1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
AT-32033-TR1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) AT-32033-TR1G
RF TRANS NPN 5.5V SOT23

RF TRANS NPN 5.5V SOT23

Supplier's Site
IC TRANS NPN BIPOLAR SOT-23 - 107-AT-32033-TR1G - Utmel Electronic Limited
Hong Kong, China
IC TRANS NPN BIPOLAR SOT-23
107-AT-32033-TR1G
IC TRANS NPN BIPOLAR SOT-23 107-AT-32033-TR1G
IC TRANS NPN BIPOLAR SOT-23

IC TRANS NPN BIPOLAR SOT-23

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number AT-32033-TR1G 516-1566-2-ND 010318-AT-32033-TR1G AT-32033-TR1G 107-AT-32033-TR1G
Product Name Bipolar RF Transistors Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - AT-32033-TR1G Discrete Semiconductor Products - Transistors - Bipolar (BJT) IC TRANS NPN BIPOLAR SOT-23
Polarity NPN; NPN NPN NPN; NPN NPN; NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23
IC(max) 32 milliamps 32 milliamps 32 milliamps
VCEO 5.5 volts 5.5 volts 5.5 volts 5.5 volts
Power Gain 11 dB 70 dB 11 to 12.5 dB
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