The 4N45 is a high gain Darlington output optocoupler containing a GaAsP light-emitting diode optically coupled to a photodetector IC, designed for digital logic ground isolation, low input current interfacing, and level shifting. It is housed in a 300 mil DIP-6 package and operates over 0°C to 70°C. It guarantees a minimum current transfer ratio of 250% at 1.0 mA input current and a minimum output breakdown voltage of 7 V. The device includes an internal base-emitter resistor and an external base access pin for gain-bandwidth adjustment. It is UL recognized with 3750 Vrms isolation for one minute and CSA and IEC/EN/DIN EN 60747-5-2 approved. Maximum input current is 20 mA, output current is 60 mA, and output power dissipation is 100 mW.
OPTOISO 3.75KV DARL W/BASE 6DIP Product overview: 4N45 from Broadcom is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.75KV. Search-friendly keywords include transistor, BJT, switching, amplification, 3.75KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N45 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N45 |
| Product Name | 3.75KV Bipolar Transistor |
| PD | 100 milliwatts |
