ROHM Semiconductor GmbH Datasheets for Transistors

Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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Product Name Notes
-20V Pch+Pch Small Signal MOSFET
1700V 3.7A N-channel SiC (Silicon Carbide) power MOSFET. ROHM Featured Products SCT2H12NZ(1700V SiC-MOSFET) and BD7682FJ-LB(AC/DC Converter IC) Evaluation Board BD7682FJ-LB-EVK-402 [Input: AC 400-690V , Output: 24V DC] Apprication Note ,...
1700V 4A N-channel SiC (Silicon Carbide) power MOSFET.
1700V 6A N-channel SiC (Silicon Carbide) power MOSFET.
2SA2071P5 is a power transistor for high speed switching.
A Power MOSFET SH8K25 is suitable for switching power supply.
A Power MOSFET SH8KA4 is suitable for switching and Motor drive application.
AEC-Q101 qualified automotive grade product. SCT2080KEHR is an SiC (Silicon Carbide) MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
AEC-Q101 qualified automotive grade product. SCT3022KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
AEC-Q101 qualified automotive grade product. SCT3030KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
AEC-Q101 qualified automotive grade product. SCT3040KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
AEC-Q101 qualified automotive grade product. SCT3080KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
AEC-Q101 qualified automotive grade product. SCT3105KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
AEC-Q101 qualified automotive grade product. SCT3160KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
BSM080D12P2C008 is a half bridge module consisting of SiC-DMOS and SiC SBD.
BSM180C12P2E202 is a SiC (silicon carbide) power module with low surge and low switching loss, suitable for converter, photovoltaics, wind power generation, heating equipment.
BSM180C12P3C202 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motor drive, converter, photovoltaics, wind power generation.
BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.
BSM250D17P2E004 is a half bridge module consisting of SiC-DMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
BSM300C12P3E201 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motor drive, converter, photovoltaics, wind power generation.
BSM300C12P3E301 is a chopper module consisting of Silicon Carbide UMOSFET and Silicon Carbide SBD.
BSM300D12P2E001 is a half bridge module consisting of Silicon Carbide DMOSFET and Silicon Carbide Schottky Barrier Diode.
BSM300D12P3E005 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.
BSM400C12P3G202 is a chopper module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, converter, photovoltaics, wind power generation.
BSM400D12P2G003 is a half-bridge module consisting of SiC-DMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
BSM400D12P3G002 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
BSM600C12P3G201 is a chopper module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, converter, photovoltaics, wind power generation.
BSM600D12P3G001 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to...
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to...
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to...
Discrete Semiconductors, MOSFETs, 200 to 800V Power MOSFETs, Nch 200 to 250V MOSFETs
DTB113EC is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
DTB113ECHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver.
DTB113EKFRA is the high reliability Automotive transistor, suitable for inverter and interface, driver.
DTB113ZC is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
DTB113ZCHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver.
DTB113ZKFRA is the high reliability Automotive transistor, suitable for inverter and interface, driver.
DTB114EKFRA is the high reliability Automotive transistor, suitable for inverter and interface, driver.
DTB114GC is an digital transistor (Resistor built-in type transistor).
DTB114GCHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver.
DTB123EC is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
DTB123ECHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver.
DTB123EKFRA is the high reliability Automotive transistor, suitable for inverter and interface, driver.
DTB123TC is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
DTB123TCHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver.
DTB143EC is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
DTB143ECHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver.
DTB143EKFRA is the high reliability Automotive transistor, suitable for inverter and interface, driver.
Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.
Half bridge module consisting of ROHM SiC-DMOSFETs.
HP8K22 is low on-resistance MOSFET for DC/DC converter.
HP8K24 is the high reliability transistor, suitable for switching and DC/DC converter.
HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application.
HP8MA2 is low on-resistance and small surface mount package MOSFET for switching application.
HS8K1 is standard MOSFET for switching application.
HS8K11 is standard MOSFET for switching application.
Middle Power MOSFET SH8K26 is suitable for switching power supply.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to...
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet...
QH8K22 is low on - resistance MOSFET for Switching.
QH8K26 is low on-resistance and Small Surface Mount Package MOSFET for switching and motor drive.
QH8K51 is the low on - resistance MOSFET for switching application.
QH8M22 is the high reliability transistor, suitable for switching applications.
QS8J4HZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101.
QS8M51HZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101.
RD3U041AAFRA is an automotive grade MOSFET that is AEC-Q101 qualified, and suitable for switching applications.
RD3U080AAFRA is a power mosfet for switching power supply.
RGC80TSX8R is the reverse conducting IGBT for voltage-resonance inverter, IH applications.
RJ1U330AAFRG is the high reliability automotive MOSFET, suitable for switching power supply.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs...
RSJ400N10FRA is the high reliability Automotive MOSFET.
SCT3022KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3030KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3040KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3040KR is an SiC MOSFET featuring a trench gate structure optimized for a number of applications, including server power supplies, solar power inverters, switch-mode power supplies, motor drives, induction heating,...
SCT3080KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SCT3080KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is...
SCT3105KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. Suitable for solar inverters, DC/DC converters, switch mode power supplies,...
SCT3105KR is an SiC MOSFET that features a trench gate structure optimized for electric vehicle charging stations, solar power inverters, and server power supplies requiring high efficiency. A new 4-pin...
SCT3160KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
SH8J31 is complex type (Pch+Pch) middle power MOSFET for Motor Drive application.
SH8K52 is a Power MOSFET with Low on-resistance, suitable for switching.
SH8KA1 is a power transistor with low on-resistance, suitable for switching and motor drive.
SH8KA2 is small surface mount package MOSFET which is suitable for switching and motor drive application.
SH8KA7 is low on-resistance and small surface mount package MOSFET for switching and motor drive application.
SH8M51 is a Power MOSFET with Low on-resistance, suitable for switching.
SH8MA2 is a Power MOSFET with Low on-resistance, suitable for Switching.
SH8MA3TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching.
SH8MA4TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching.
Small surface mount package RQ6C050UN is suitable for Switching applications.
SP8J66FRA is the high reliability automotive MOSFET, suitable for Switching.
SP8K1FRA is a Power MOSFET with Low on-resistance, suitable for switching. It is a highly reliable product for automotive.
SP8K22HZG is an automotive grade MOSFET that is AEC-Q101 qualified. Two Nch 45V MOSFETs are included in the SOP8 package. Built-in ESD protection diode. Ideal for switching applications.
SP8K24HZG is the high reliability automotive MOSFET, suitable for switching application.
SP8K2HZG is an automotive grade MOSFET that is AEC-Q101 qualified. Nch+Nch 30V MOSFETs with ESD protection diode is included in the SOP8 package. Ideal for switching applications.
SP8K3FRA is a Power MOSFET with Low on-resistance, suitable for switching. It is a highly reliable product for automotive.
SP8K52HZG is an automotive grade MOSFET that is AEC-Q101 qualified. Two Nch 100V MOSFETs are included in the SOP8 package. Built-in ESD protection diode. Ideal for switching applications.
SP8M21HZG is an automotive grade MOSFET that is AEC-Q101 qualified. 45V Nch and Pch pair MOSFETs are included in the SOP8 package. Built-in ESD protection diode. Ideal for switching applications.
SP8M3HZG is an automotive grade MOSFET that is AEC-Q101 qualified. Nch+Pch 30V MOSFETs with ESD protection diode is included in the SOP8 package. Ideal for switching applications.
SP8M4HZG is an automotive grade MOSFET that is AEC-Q101 qualified. Nch+Pch 30V MOSFETs with ESD protection diode is included in the SOP8 package. Ideal for switching applications.
SP8M5FRA is a Power MOSFET with Low on-resistance, suitable for switching. It is a highly reliable product for automotive.
SP8M6HZG is an automotive grade MOSFET that is AEC-Q101 qualified. Nch+Pch 30V MOSFETs with ESD protection diode is included in the SOP8 package. Ideal for switching applications.
The Middle Power MOSFET QH8JA1 is suitable for switching applications.
The Middle Power MOSFET QH8KA4 is suitable for switching and battery applications.
The Middle Power MOSFET QH8MA2 is suitable for switching power supply.
The Middle Power MOSFET QH8MA3 is suitable for switching power supply.
The Middle Power MOSFET QH8MA4 is suitable for switching power supply.
The Middle Power MOSFET UT6K3 is suitable for load switch and battery switch for mobile, DC/DC converter.
The Power MOSFET QH8KA1 is suitable for switching power supply and motor drive.
The Power MOSFET QH8KA2 is suitable for switching power supply and motor drive.
The Power MOSFET QS8J13 is suitable for switching power supply.
The Ultra Small Package(0806size).
The ultra-small package(1006size) RV2C001ZP is suitable for portable devices.
The ultra-small package(1006size) RV2C002UN is suitable for portable devices.
The ultra-small package(1006size) RV2C010UN is suitable for portable devices.
The UT6J3 is a Small Surface Mount Package MOSFET for switching application.
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications.
US6J12 is low on-resistance MOSFET, suitable for switching application.
UT6JA2 is low on-resistance and small surface mount package MOSFET for switching application.
UT6JA3 is a power MOSFET with low on-switching, suitable for switching.
UT6MA2 is small surface mount package MOSFET which is suitable for switching application.
UT6MA3 is Low on-resistance Middle Power MOSFET for switching application.

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