Half bridge module consisting of ROHM SiC-DMOSFETs.
Half bridge module consisting of ROHM SiC-DMOSFETs.
SIC 2N-CH 1200V 204A MODULE Product overview: BSM180D12P2C101 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 204A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 204A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-BSM180D12P2C101 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 204A (Tc) 1130W Module
SIC 2N-CH 1200V 204A MODULE
| ROHM Semiconductor USA, LLC | ROHM Semiconductor GmbH | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | BSM180D12P2C101 | BSM180D12P2C101 | 289-BSM180D12P2C101 | BSM180D12P2C101-ND | BSM180D12P2C101 |
| Product Name | SiC Power Module | 1200V, 204A, Half bridge, Silicon-carbide (SiC) Power Module | 1200V 204A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | SiC | ||||
| V(BR)DSS | 1200 volts | 1200 volts | |||
| IDSS | 180000 milliamps | 204000 milliamps | |||
| PD | 1.13E6 milliwatts | 1.36E6 milliwatts | 175 milliwatts | ||
| TJ | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) | -40 to 150 C (-40 to 302 F) |
