ROHM Semiconductor USA, LLC SiC Power Module BSM180D12P2E002

The BSM180D12P2E002 is a half bridge power module designed for high-performance applications, featuring a maximum drain-source voltage of 1200V and a continuous drain current rating of 204A at a case temperature of 60¬8C. This module utilizes Silicon Carbide (SiC) technology, which allows for low surge and low switching losses, enabling high-speed switching capabilities. The product is suitable for various applications, including motor drives, inverters, converters, photovoltaics, wind power generation, and induction heating equipment. The module's construction includes SiC-DMOSFET and SiC-SBD components, contributing to its efficiency and reliability. It has a maximum junction temperature of 150¬8C and a storage temperature range from -40¬8C to 125¬8C. The isolation voltage is rated at 2500Vrms, ensuring safe operation in demanding environments. The thermal resistance from case to heat sink is specified at 0.035¬8C/W, which is critical for effective thermal management in high-power applications. Engineers considering this module should evaluate its specifications against their project requirements, particularly in terms of voltage, current handling, and thermal performance.