ROHM Semiconductor GmbH NPN, SOT-346T, 30V 2A, Driver Transistor 2SCR512R

Description
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Description
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Datasheet
Datasheet Summary
Powered by GS/AI

The 2SCR512R is an NPN bipolar junction transistor designed for middle power driver applications, including low frequency amplification and high speed switching. It is packaged in the TSMT3 (SOT-346T) case and has a collector-emitter voltage rating of 30 V and a continuous collector current of 2 A. The collector-emitter saturation voltage is 400 mV maximum at a collector current of 700 mA and base current of 35 mA. The DC current gain ranges from 200 to 500 at a collector current of 100 mA. The junction temperature operates up to 150 °C, with a storage temperature range of -55 °C to +150 °C. The transition frequency is 320 MHz at a collector-emitter voltage of 10 V and collector current of -100 mA. The turn-on time is 25 ns and fall time is 20 ns under specified test conditions.

Datasheet Summary
Powered by GS/AI

The 2SCR512R is an NPN bipolar junction transistor designed for middle power driver applications, including low frequency amplification and high speed switching. It is packaged in the TSMT3 (SOT-346T) case and has a collector-emitter voltage rating of 30 V and a continuous collector current of 2 A. The collector-emitter saturation voltage is 400 mV maximum at a collector current of 700 mA and base current of 35 mA. The DC current gain ranges from 200 to 500 at a collector current of 100 mA. The junction temperature operates up to 150 °C, with a storage temperature range of -55 °C to +150 °C. The transition frequency is 320 MHz at a collector-emitter voltage of 10 V and collector current of -100 mA. The turn-on time is 25 ns and fall time is 20 ns under specified test conditions.

Suppliers

Company
Product
Description
Supplier Links
NPN, SOT-346T, 30V 2A, Driver Transistor - 2SCR512R - ROHM Semiconductor GmbH
Willich, Germany
NPN, SOT-346T, 30V 2A, Driver Transistor
2SCR512R
NPN, SOT-346T, 30V 2A, Driver Transistor 2SCR512R
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Supplier's Site Datasheet
NPN Driver Transistor - 2SCR512R - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
NPN Driver Transistor
2SCR512R
NPN Driver Transistor 2SCR512R
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Transistors Transistors
Product Number 2SCR512R 2SCR512R
Product Name NPN, SOT-346T, 30V 2A, Driver Transistor NPN Driver Transistor
Polarity NPN NPN
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 8220858 - Radwell International
Allen-Bradley / Rockwell Automation
View Details
MOSFETs - 1827066 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT223; Sot-223
View Details