The 2SCR587D3 is an NPN power transistor in a TO-252 (DPAK) package, rated for a collector-emitter voltage of 120 V and a continuous collector current of 3 A. It features a low collector-emitter saturation voltage of 120 mV maximum at I_C = 1 A and I_B = 100 mA, making it suitable for low-frequency amplification and power driver applications. The device has a DC current gain (h_FE) ranging from 120 to 390 at I_C = 100 mA and V_CE = 5 V, with a transition frequency of 250 MHz. The maximum power dissipation is 10 W at T_C = 25°C, and the junction temperature ranges from -55°C to +150°C. The packaging is supplied in a 330 mm tape reel with a 16 mm tape width, at 2500 units per reel.
2SCR587D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | 2SCR587D3 |
| Product Name | NPN, TO-252 (DPAK), 120V 3A, Power Transistor |
| PD | 10000 milliwatts |