ROHM Semiconductor GmbH NPN, TO-252 (DPAK), 120V 3A, Power Transistor 2SCR587D3

Description
2SCR587D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
Description
2SCR587D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
Datasheet
Datasheet Summary
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The 2SCR587D3 is an NPN power transistor in a TO-252 (DPAK) package, rated for a collector-emitter voltage of 120 V and a continuous collector current of 3 A. It features a low collector-emitter saturation voltage of 120 mV maximum at I_C = 1 A and I_B = 100 mA, making it suitable for low-frequency amplification and power driver applications. The device has a DC current gain (h_FE) ranging from 120 to 390 at I_C = 100 mA and V_CE = 5 V, with a transition frequency of 250 MHz. The maximum power dissipation is 10 W at T_C = 25°C, and the junction temperature ranges from -55°C to +150°C. The packaging is supplied in a 330 mm tape reel with a 16 mm tape width, at 2500 units per reel.

Datasheet Summary
Powered by GS/AI

The 2SCR587D3 is an NPN power transistor in a TO-252 (DPAK) package, rated for a collector-emitter voltage of 120 V and a continuous collector current of 3 A. It features a low collector-emitter saturation voltage of 120 mV maximum at I_C = 1 A and I_B = 100 mA, making it suitable for low-frequency amplification and power driver applications. The device has a DC current gain (h_FE) ranging from 120 to 390 at I_C = 100 mA and V_CE = 5 V, with a transition frequency of 250 MHz. The maximum power dissipation is 10 W at T_C = 25°C, and the junction temperature ranges from -55°C to +150°C. The packaging is supplied in a 330 mm tape reel with a 16 mm tape width, at 2500 units per reel.

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NPN, TO-252 (DPAK), 120V 3A, Power Transistor - 2SCR587D3 - ROHM Semiconductor GmbH
Willich, Germany
NPN, TO-252 (DPAK), 120V 3A, Power Transistor
2SCR587D3
NPN, TO-252 (DPAK), 120V 3A, Power Transistor 2SCR587D3
2SCR587D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.

2SCR587D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number 2SCR587D3
Product Name NPN, TO-252 (DPAK), 120V 3A, Power Transistor
PD 10000 milliwatts
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