The 2SCR522EB is an NPN general purpose transistor in the SOT-416FL package, rated for a collector-emitter voltage of 20 V and a collector current of 200 mA. It has a power dissipation of 150 mW and a junction temperature range of -55 to +150 °C. The device features a DC current gain (hFE) ranging from 120 to 560 at a collector current of 1 mA and collector-emitter voltage of 2 V, with a transition frequency of 400 MHz. Collector-emitter saturation voltage is specified up to 300 mV at a collector current of 100 mA and base current of 10 mA.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | 2SCR522EB | 2SCR522EB |
| Product Name | NPN, SOT-416FL, 20V 200mA, General Purpose Amplification Transistor | NPN General Purpose Amplification Transistor |
| Polarity | NPN | NPN |
