The 2SCR523EB is an NPN silicon transistor in the SOT-416FL package, designed for general-purpose small-signal amplification. It has a collector-emitter voltage rating of 50 V and a collector current rating of 100 mA. With a maximum power dissipation of 150 mW, it operates within a junction temperature range up to 150°C. The device has a DC current gain (hFE) ranging from 120 to 560 at 1 mA collector current and 6 V collector-emitter voltage, and a transition frequency of 350 MHz. It complies with RoHS standards and is supplied in tape and reel packaging with a 180 mm reel size and 8 mm tape width, in 3000-piece units. Complementary PNP type is 2SAR523EB.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
General purpose transistor(50V,0.1A)
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1126095-2SCR523EB
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | RF Transistors |
| Product Number | 2SCR523EB | 2SCR523EB | 276-2SCR523EB | 1126095-2SCR523EB |
| Product Name | NPN, SOT-416FL, 50V 100mA, General Purpose Amplification Transistor | NPN General Purpose Amplification Transistor | 50V 0.1A Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - 2SCR523EB |
| Polarity | NPN | NPN |
