ROHM Semiconductor GmbH 1200V, 180A, Chopper, Full SiC-Power Module with Trench MOSFET BSM180C12P3C202

Description
BSM180C12P3C202 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motor drive, converter, photovoltaics, wind power generation.
Request a Quote
Description
BSM180C12P3C202 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motor drive, converter, photovoltaics, wind power generation.
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

BSM180C12P3C202 is a SiC power module designed for applications such as motor drives, converters, photovoltaics, and wind power generation. It features low surge and low switching loss characteristics, enabling high-speed switching capabilities. The module is constructed using SiC-UMOSFET and SiC-SBD technologies, which contribute to its reduced temperature dependence. The absolute maximum ratings include a drain-source voltage of 1200V and a maximum junction temperature of 150¬8C. The module supports a continuous drain current of 180A and a pulse current of up to 360A at a case temperature of 60¬8C. Its thermal resistance from junction to case is specified, ensuring effective heat management in various applications.

Datasheet Summary
Powered by GS/AI

BSM180C12P3C202 is a SiC power module designed for applications such as motor drives, converters, photovoltaics, and wind power generation. It features low surge and low switching loss characteristics, enabling high-speed switching capabilities. The module is constructed using SiC-UMOSFET and SiC-SBD technologies, which contribute to its reduced temperature dependence. The absolute maximum ratings include a drain-source voltage of 1200V and a maximum junction temperature of 150¬8C. The module supports a continuous drain current of 180A and a pulse current of up to 360A at a case temperature of 60¬8C. Its thermal resistance from junction to case is specified, ensuring effective heat management in various applications.

Suppliers

Company
Product
Description
Supplier Links
1200V, 180A, Chopper, Full SiC-Power Module with Trench MOSFET - BSM180C12P3C202 - ROHM Semiconductor GmbH
Willich, Germany
1200V, 180A, Chopper, Full SiC-Power Module with Trench MOSFET
BSM180C12P3C202
1200V, 180A, Chopper, Full SiC-Power Module with Trench MOSFET BSM180C12P3C202
BSM180C12P3C202 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motor drive, converter, photovoltaics, wind power generation.

BSM180C12P3C202 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motor drive, converter, photovoltaics, wind power generation.

Supplier's Site Datasheet
SiC Power Module - BSM180C12P3C202 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
SiC Power Module
BSM180C12P3C202
SiC Power Module BSM180C12P3C202
BSM180C12P3C202 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motro drive, converter, photovoltaics, wind power generation.

BSM180C12P3C202 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motro drive, converter, photovoltaics, wind power generation.

Supplier's Site Datasheet
Single FETs, MOSFETs - 846-BSM180C12P3C202-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
846-BSM180C12P3C202-ND
Single FETs, MOSFETs 846-BSM180C12P3C202-ND
N-Channel 1200V 180A (Tc) 880W (Tc) Chassis Mount Module

N-Channel 1200V 180A (Tc) 880W (Tc) Chassis Mount Module

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSM180C12P3C202
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSM180C12P3C202
SICFET N-CH 1200V 180A MODULE

SICFET N-CH 1200V 180A MODULE

Supplier's Site
Sic Mosfet, N Channel, 1.2Kv, 180A Rohs Compliant Rohm - 88AH6159 - Newark, An Avnet Company
Chicago, IL, United States
Sic Mosfet, N Channel, 1.2Kv, 180A Rohs Compliant Rohm
88AH6159
Sic Mosfet, N Channel, 1.2Kv, 180A Rohs Compliant Rohm 88AH6159
SIC MOSFET, N CHANNEL, 1.2KV, 180A ROHS COMPLIANT: YES

SIC MOSFET, N CHANNEL, 1.2KV, 180A ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Power MOSFET Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSM180C12P3C202 BSM180C12P3C202 846-BSM180C12P3C202-ND BSM180C12P3C202 88AH6159
Product Name 1200V, 180A, Chopper, Full SiC-Power Module with Trench MOSFET SiC Power Module Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Sic Mosfet, N Channel, 1.2Kv, 180A Rohs Compliant Rohm
V(BR)DSS 1200 volts 1200 volts
IDSS 180000 milliamps 180000 milliamps
PD 880000 milliwatts 880000 milliwatts
TJ -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type C Module Module TO-3
Unlock Full Specs
to access all available technical data