BSM300D12P3E005 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 300A (Tc) 1260W (Tc) Chassis Mount Module
SIC 2N-CH 1200V 300A MODULE
SIC MOSFET, DUAL N CHANNEL, 1.2KV, 300A ROHS COMPLIANT: YES
| ROHM Semiconductor GmbH | DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSM300D12P3E005 | 846-BSM300D12P3E005-ND | BSM300D12P3E005 | 88AH6166 |
| Product Name | 1200V, 300A, Half bridge, Full SiC-Power Module with Trench MOSFET | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Sic Mosfet, Dual N Channel, 1.2Kv, 300A Rohs Compliant Rohm |
| V(BR)DSS | 1200 volts | |||
| IDSS | 300000 milliamps | |||
| PD | 1.26E6 milliwatts | |||
| TJ | -40 to 125 C (-40 to 257 F) |
