BSM300D12P3E005 is a half-bridge silicon carbide power module integrating SiC UMOSFET and SiC SBD for motor drives and renewable energy systems. It is rated for 1200 V drain-source voltage and 300 A continuous current at 55°C case temperature. Maximum junction temperature is 175°C. Total power dissipation is 1260 W at 25°C case temperature. Junction-to-case thermal resistance is 0.12 °C/W for the UMOSFET and 0.16 °C/W for the SBD. Gate-source voltage ranges from -4 V to 22 V, with a 26 V surge tolerance under 300 ns. Isolation voltage is 2500 Vrms. Stray inductance is 14.0 nH. Mounting uses M6 screws at 4.5 N·m torque. Switching delays are 30 ns (td(on)) and 210 ns (td(off)) at 300 A. NTC thermistor resistance is 5.0 kΩ at 25°C. The module operates from -40°C to 150°C junction temperature and complies with RoHS.
BSM300D12P3E005 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 300A (Tc) 1260W (Tc) Chassis Mount Module
SIC MOSFET, DUAL N CHANNEL, 1.2KV, 300A ROHS COMPLIANT: YES
SIC 2N-CH 1200V 300A MODULE
| ROHM Semiconductor GmbH | DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | BSM300D12P3E005 | 846-BSM300D12P3E005-ND | 88AH6166 | BSM300D12P3E005 |
| Product Name | 1200V, 300A, Half bridge, Full SiC-Power Module with Trench MOSFET | FET, MOSFET Arrays | Sic Mosfet, Dual N Channel, 1.2Kv, 300A Rohs Compliant Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| V(BR)DSS | 1200 volts | |||
| IDSS | 300000 milliamps | |||
| PD | 1.26E6 milliwatts | |||
| TJ | -40 to 125 C (-40 to 257 F) |
