ROHM Semiconductor GmbH 1200V, 300A, Half bridge, Full SiC-Power Module with Trench MOSFET BSM300D12P3E005

Description
BSM300D12P3E005 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.
  • 1200V, 300A, Half bridge, Full SiC-Power Module with Trench MOSFET - BSM300D12P3E005 - ROHM Semiconductor GmbH
    ROHM Semiconductor GmbH
  • FET, MOSFET Arrays - 846-BSM300D12P3E005-ND - DigiKey
    DigiKey
  • Sic Mosfet, Dual N Channel, 1.2Kv, 300A Rohs Compliant Rohm - 88AH6166 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSM300D12P3E005 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
BSM300D12P3E005 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
1200V, 300A, Half bridge, Full SiC-Power Module with Trench MOSFET - BSM300D12P3E005 - ROHM Semiconductor GmbH
ROHM Semiconductor GmbH
Willich, Germany
1200V, 300A, Half bridge, Full SiC-Power Module with Trench MOSFET
BSM300D12P3E005
1200V, 300A, Half bridge, Full SiC-Power Module with Trench MOSFET BSM300D12P3E005
BSM300D12P3E005 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.

BSM300D12P3E005 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.

Supplier's Site Datasheet
FET, MOSFET Arrays - 846-BSM300D12P3E005-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
846-BSM300D12P3E005-ND
FET, MOSFET Arrays 846-BSM300D12P3E005-ND
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 300A (Tc) 1260W (Tc) Chassis Mount Module

Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 300A (Tc) 1260W (Tc) Chassis Mount Module

Buy Now Datasheet
Sic Mosfet, Dual N Channel, 1.2Kv, 300A Rohs Compliant Rohm - 88AH6166 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Sic Mosfet, Dual N Channel, 1.2Kv, 300A Rohs Compliant Rohm
88AH6166
Sic Mosfet, Dual N Channel, 1.2Kv, 300A Rohs Compliant Rohm 88AH6166
SIC MOSFET, DUAL N CHANNEL, 1.2KV, 300A ROHS COMPLIANT: YES

SIC MOSFET, DUAL N CHANNEL, 1.2KV, 300A ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSM300D12P3E005 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSM300D12P3E005
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSM300D12P3E005
SIC 2N-CH 1200V 300A MODULE

SIC 2N-CH 1200V 300A MODULE

Supplier's Site

Technical Specifications

  ROHM Semiconductor GmbH DigiKey Newark, An Avnet Company Acme Chip Technology Co., Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BSM300D12P3E005 846-BSM300D12P3E005-ND 88AH6166 BSM300D12P3E005
Product Name 1200V, 300A, Half bridge, Full SiC-Power Module with Trench MOSFET FET, MOSFET Arrays Sic Mosfet, Dual N Channel, 1.2Kv, 300A Rohs Compliant Rohm Discrete Semiconductor Products - Transistors - FETs, MOSFETs
V(BR)DSS 1200 volts
IDSS 300000 milliamps
PD 1.26E6 milliwatts
TJ -40 to 125 C (-40 to 257 F)
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