The 2SCR563F3 is an NPN middle power transistor for low-frequency amplification, packaged in a HUML2020L3 (DFN2020-3S) leadless SMD package. It has a collector-emitter voltage of 50 V, a continuous collector current of 6 A, and a peak current of 12 A. Collector-emitter saturation voltage is 350 mV max at I_C = 3 A and I_B = 150 mA. DC current gain ranges from 180 to 450 at V_CE = 3 V and I_C = 500 mA. Power dissipation is 1.0 W on an FR4 board with 645 mm² Cu pad. Junction temperature is rated to 150°C, and storage temperature spans -55°C to +150°C. The device is supplied in 180 mm tape, 8 mm width, 3000 units per reel.
2SCR563F3 is a middle power transistor with Low VCE(sat), suitable for low frequency amplifier. HUML2020L3 (DFN2020-3S) is a small leadless surface mount package with excellent thermal and electrical conductivity.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | 2SCR563F3 |
| Product Name | Small and Excellent Thermal Conductivity, NPN 6A 50V Middle Power Transistor |
| PD | 1000 milliwatts |
